基于极性面的零极化场InAlN基LED制备研究

Ⅲ族氮化物LED已在照明和显示等领域得到广泛应用，但其本身固有的强极化场会在LED量子阱中产生量子限制斯塔克效应（QCSE），在高Al和高In组分的氮化物材料中强极化问题愈发明显，降低了器件发光性能。半极性面或非极性面量子阱可用于抑制极化场，但与极性面相比，其成本较高，短期内难以产业化。申请人的前期研究表明InAlN/InGaN、InAlN/AlGaN等异质结，在极性面上一定组分范围内能实现界面处极化强度为零，可构成零极化场量子阱，消除量子阱中极化场和QCSE的影响，提高电子和空穴间辐射复合率，从而提升LED发光性能。因此，本项目提出在极性面上研制零极化场InAlN基LED，以较低成本制备高性能LED。同时，InAlN基LED可覆盖从深紫外到可见光乃至近红外的光谱范围，具有广泛应用前景。本项目将研制出极性面零极化场InAlN基LED器件，并为其产业化发展奠定理论与实验基础。

Ⅲ-nitride LEDs have been widely used in fields such as lighting and display, but their inherently strong polarization fields can generate quantum-confined Stark effects (QCSE) in LED quantum wells. The problem of strong polarization in the nitride materials with high Al and high In contents becomes more obvious, which reduces the device's light emitting performance. Semi-polar or non-polar plane quantum wells can be used to suppress the polarization field, but compared with the polar plane, its cost is higher and it is difficult to industrialize in the short term. The applicant’s previous research shows that heterojunctions such as InAlN/InGaN and InAlN/AlGaN can achieve zero polarization at the interface within a certain composition range on the polar plane and constitute zero-polarization field quantum well. They can eliminate the effects of polarization field and QCSE, and increase the radiative recombination rate between electrons and holes, thereby improving LED light emitting performance. Therefore, this project proposes to develop the zero-polarization field InAlN-based LEDs on the polar plane to produce high-performance LEDs at a lower cost. At the same time, InAlN-based LEDs can cover the spectral range from deep ultraviolet to visible light and even near infrared, and have wide application prospects. This project aims to obtain the zero polarization field InAlN-based LED devices on the polar plane and lay the theoretical and experimental basis for its industrial development.