基于热压阻NEMS谐振器的单芯片射频前端基础器件研究

热压阻NEMS谐振器，是基于压阻自放大效应的谐振器件，具有高品质因数和高射频增益等优点，且通过性能提升，有望制备出各种高性能射频前端器件，最终实现单芯片射频前端。目前热压阻NEMS谐振器研究方面存在理论不完善、谐振频率低、带外抑制能力差等问题。针对这些问题，本项目拟开展对纳米压阻梁谐振特性的电流调制机制的研究，并根据理论指导，完成用于射频前端器件的热压阻NEMS谐振器结构设计和器件研制。本项目通过对热压阻NEMS器件中热时间常数与器件结构尺寸的关系模型的建立、射频信号的有效屏蔽设计以及谐振结构的非线性变形对器件功率容量的影响等关键科学问题的解决，建立准确的纳米压阻梁谐振的电流调制机制模型，研制出适用于制备振荡器、滤波器和放大器的不同性能的谐振器，谐振频率达到3GHz以上，品质因数大于10000。项目的开展能够为单芯片射频前端的发展奠定理论和技术基础，提升我国智能无线通信系统领域的竞争力。

The thermo-piezoresistive NEMS resonator is a resonant device based on the piezoresistive self-amplification effect. It has the advantages of high quality factor and high RF gain and so on. Through the improvement of performance, it is expected to prepare various high-performance RF front-end devices, and finally achieve single-chip RF front end. At present, there are some problems in the research of thermo-piezoresistive NEMS resonators, such as incomplete theory, low resonance frequency, and poor out-of-band suppression capability. In response to solve these problems, this project intends to carry out research on the current modulation mechanism of the resonance characteristics of nano-piezoresistive beams, and complete the structural design and devices preparation of thermo-piezoresistive NEMS resonators for various components in the RF front-end according to theoretical guidance. This project is established by solving key scientific issues such as the establishment of the relationship model between the thermal time constant and the device structure size in the thermo-piezoresistive NEMS device, the effective shielding design of the RF signal, and the effect of the nonlinear deformation of the resonance structure on the device power capacity. The accurate current modulation mechanism model of the nano-piezoresistive beam resonance will be developed according to the research. The thermo-piezoresistive NEMS resonators with different performances will be studied and fabricated, whose performance will be suitable for the preparation of oscillators, filters and amplifiers. The basic performance of frequency above 3 GHz and a quality factor greater than 10,000 of the thermo-piezoresistive NEMS resonators will be guaranteed. The development of the project can lay the theoretical and technical foundation for the development of single-chip RF front-end and enhance the competitiveness of China's intelligent wireless communication system.