远程氢气等离子体诱导Fe-Si系纳米结构的可控制备及其结晶相控制研究

铁硅二元化合物(Fe-Si)因其结晶物相的不同表现出光、电、磁融合的奇妙特性而作为一种新型硅基材料是近年来电子信息材料领域研究的热点之一。然而，铁硅二元化合物的空间尺寸减小到纳米量级时，其纳米结构的形成机制发生变化，使晶体中原子排列方式发生改变而导致其物相及物理性质发生变化。在纳米尺度上制备尺寸可控的量子点及理解其物相调控机制是纳米器件研究的首要解决的基本问题。迫切需要从制备方法和调控机理上进行深入的研究。本项目创新地采用远程氢气等离子体诱导辅助技术制备相、尺寸可控的Fe-Si系量子点，研究Fe-Si系量子点形成过程，解明Fe-Si系在纳米构造体系中特有的硅化反应机理。探究并揭示Fe-Si系纳米量子点形成过程中的物理规律，构筑纳米尺度上铁硅二元系结晶物相和物性调控的方法体系。本项目的实施将拓展Fe-Si系纳米结构可控制备的方法和工艺，为开发新型光电及磁性存储等器件提供理论基础和实验支持。

Iron-silicides as novel silicon-based materials have attracted great attentions in the field of electronic information materials in recent years because of their excellent photoelectric and magnetic fusion properties which is strongly dependent on their different crystalline phases. However, when the size of the iron-silicides are reduced to the level of nanometers, the formation mechanism in the nanostructures is different from the bulks and the arrangement of the atoms in the crystal is reconstructed, resulting in the transformation of its phase and the change of physical properties. The formation of nanodots with controlled size and understanding of the phase control mechanism at the nanoscale are the primary issues in the research of nanodevices. Therefore, there is an urgent need for in-depth research on preparation methods and modulation mechanisms. The project innovatively uses remote hydrogen plasma-induced technology to prepare phase and size-controlled iron-silicide nanodots on SiO2 and studies the formation process of iron-silicide nanodots to clarify the unique silicidation reaction mechanism in the Fe-Si system on the nanoscale. We will try to explore and reveal the physical mechanism in the formation of the iron-silicide nanocrystal nanodots and establish a method system for the control of the physical and chemical properties of the Fe-Si binary system on the nanoscale. The implementation of this project will expand the method and technology of controllable preparation of iron-silicide nanostructures and provide theoretical basis and experimental support for the development of new optoelectronic and magnetic storage devices.