基于连续滴加CBD法制备均匀、高In掺杂量In:CdS缓冲层的高效CIGS太阳能电池

In掺杂CdS可以改善CIGS/CdS界面能带排列并提升界面载流子传输能力。但是传统In掺杂方式存在In分布不均匀和In掺杂量小难以调控CdS能带的问题，限制了CIGS效率进一步提升。针对以上问题，本项目改进传统化学水浴沉积（CBD）制备In:CdS的策略，提出将In源在CdS沉积过程中连续缓慢加入反应溶液的方式以实现In掺杂CdS。此策略可以极大降低实时参与反应的In源浓度，从而抑制由于In2S3和CdS溶度积差别过大而优先发生的In2S3沉淀反应，使In充分参与CdS沉积反应。进而实现均匀致密且高In掺杂量的In:CdS缓冲层。接着通过调控In掺杂量以及In的分布使CdS与CIGS形成有利的spike能带结构，并增强异质结界面能带弯曲和内建电场，最终提升CIGS器件性能。本项目从缓冲层和界面调控出发，希望解决载流子界面复合问题，为CIGS器件性能提升提供新的解决方案。

Doping CdS with In can modify the CIGS/CdS band alignment and enhance the carriers separation and collection ability. However, through the tradition In doping strategies, the In distribution is no-uniform and the CdS energy level is difficult to regulate because of the limited In doping contents, which inhibit the CIGS device performance improvement. In this project, we demonstrate a modified sequential CBD strategy, which the In source is sequential slowly added in the reaction solution during the CdS deposition process. In this process, the concentration of In ions involved in the real-time deposition was dramatically reduced. Thus, the In2S3 precipitation reaction was significantly inhibited. By utilizing this strategy, uniform and dense with high increased In content In:CdS buffer layer was successfully prepared. The optimized In doped CdS will form beneficial spike bang alignment with CIGS, enhance the interface band bending and built in field, hence promote the carrier transmission and passivated interface recombination. The relationship between the In:CdS buffer layer and performance of the CIGS device will be thoroughly investigated and established. This project aim to suppress the interface recombination through modifies the buffer layer and provides new route for high performance CIGS solar cells.