基于氢氟酸刻蚀与微纳结构的高效蓝光InP量子点材料与器件研究

量子点LED（QLED）显示利用量子点（QD）独立发射红、绿、蓝三基色构成一个象素，通过调节三种颜色的比例来产生彩色像素。目前，红绿光InP量子点量子效率都接近100%，器件外量子效率都大于7%。然而，蓝光InP最高量子产率仅为83%，QLED最高外量子效率仅为2.5%。因此低价、无毒害、高量子产率的蓝光InP量子点的合成，高性能蓝光InP QLED的制备具有重要意义。基于蓝光InP QLED存在的主要问题，本项目依次提出了三个研发方向。首先采用中高温成核、低温刻蚀制备高质量、低缺陷的天蓝光InP核心，在低温条件下通过HF刻蚀，有效的去除表面的InPOx等缺陷，同时也可以减小量子点尺寸，得到深蓝光InP量子点。其次通过优化壳层结构和厚度有效地限制核心激子的跃迁，提升材料性能。最后通过在器件中引入微纳结构，有效抑制全内反射，提高出光效率。

Quantum dots (QDs) independently emit three primary colors of red, green, and blue to form a pixel by adjusting the three colors’ proportion to generate color pixels. Red, green, and blue light sources are all significant for display, and none of them are indispensable. At present, there is a big gap between the performance of blue light quantum dot light emitting diode (QLED) and red light and green light, which has become one of the main bottlenecks restricting the development of full-color InP QLED. Based on the main problems of blue InP QLED, this project proposes three research and development directions. Firstly, InP core QDs were synthesized by high temperature nucleation and low temperature etching. High-quality, low-defect sky-blue InP core QDs were synthesized at high temperature, and HF etching at low temperature can effectively remove InPOx and other defects on the surface of InP core. Secondly, by optimizing the structure and thickness of the shell layer, the transition of the core excitons is effectively limited, and the QY of InP QDs can be significantly improved. Finally, by introducing a micro-nano structure into the device, the total internal reflection is effectively suppressed and the light extraction efficiency is improved.