基于空间应用的Si-PIN探测器辐照性能研究

Si-PIN探测器是一种高性能的X射线探测器，可以同时满足高时间分辨、高能量分辨和一定成像分辨率的要求，在高能物理实验、天体物理和宇宙线、生物、工业、安全检测、核医学、X光成像等方面有着重要的应用前景。本项目以4英寸高阻Si片为材料，采用平面工艺技术研制Si-PIN探测器，主要使用T-CAD模拟探测器的结构设计，并实际进行工艺制备、信号电极引出等关键技术，使得探测器达到低漏电流以及良好的金属-半导体接触。探测器辐照前后性能发生变化，特别是探测器的结电容变化，导致信号读出电子学特别是前端放大器的匹配电路作出相应调整以达到最佳性能。本研究同时还着眼于探测器的辐照损伤后的退火机理研究，希望不同的退火机制能对探测器性能的起到回复作用。

Si-PIN detector is a high-performance X-ray detector, and can meet the high time resolution, high energy resolution and the requirements of imaging resolution, which has great applications in experiments of high-energy physics, astrophysics and cosmic rays, biological, industrial, security detection, nuclear medicine, X-ray imaging and so on. 4-inch high resistance Si wafer was employed in the project, and Si-PIN detectors were fabricated by planar technology. The detector structure design was simulated by T-CAD, and the actual fabrication process, signal electrode deposition and other technologies was employed to achieve low leakage current and consistent metal-semiconductor contacts. The detector's performance changes after irradiation, especially the changes of junction capacitance which will caused the signal readout electronics, especially the front-end amplifier circuit adjustment to achieve the best performance. This study also focused on the study of annealing mechanism after irradiaton, hopefully,different annealing mechanism can play important role in the recover of damaged detectors.