2004年石墨烯的发现为人们开启了二维材料之门。有着"白石墨烯"之称的BN二维原子晶体材料，其晶格结构与石墨烯最为相似，具有很多优异的物理和化学性能，极具研究价值。作为宽带隙（大于5.5 eV）半导体，六方BN（h-BN）基材料在深紫外发光材料与器件方面的应用价值一直备受关注，但是其深紫外区带边发射往往会被深能级缺陷或杂质强烈抑制，这是h-BN基材料要想真正应用于深紫外发光材料与器件所必须解决的一个关键科学问题。本项目中针对BN白石墨烯拟将开展的研究工作，便主要是围绕这一目标而展开的。我们将在"自下而上"控制生长单原子层（或少层）厚度的高质量二维BN"白石墨烯"的基础上，研究其等电子掺杂问题，通过在BN禁带中引入浅能级的等电子发光中心，来增强其深紫外发光性能，并研究等电子中心如何束缚自由激子及其高效发光的物理机制，以期为新型高效的h-BN基深紫外发光材料与器件的研究与开发开辟一条新的途径。

The experimental discovery of graphene in 2004 has opened the door of 2D material research. The 2D atomic layers of hexagonal boron nitride (h-BN), so called 'white graphene', share the most similar honeycomb lattice structure with graphene and possess many peculiar physical and chemical properties. Known as typical wide band-gap (Eg>5.5 eV) semiconductors, the h-BN based materials have long been expected to hold great promise in deep-ultraviolet (DUV) light emitting materials and devices. However, research along this aspect has been prohibited by a long-standing problem, that is, the DUV light emitting properties of h-BN materials are often heavily deteriorated due to the presence of deep-energy-level defects and/or impurities that will trap the free band-edge excitons. This project is tended to address this challenging issue by exploring isoelectronic doping of BN 'graphene' atomic layers on the basis of their controlled "bottom-up" synthesis. By introducing the isoelectronic centers with shallow energy levels in the forbidden band of h-BN, the band-edge excitions will be trapped preferentially by the isoelectronic dopants, thereby giving rise to intense DUV light emitting with energies just nearby the band-edge region. We will study the detailed mechanism with respect to how the isoelectronic centers in a BN system can bind the free band-edge excitons and the subsequent emitting process. These related studies will pave a new avenue for the development of high-efficiency DUV light emitting materials and devices based on the BN 'white graphene'.