电流诱导磁性纳米线中畴壁运动这一现象的发现使得围绕磁畴壁运动而设计的纳米器件成为近年来自旋电子学的研究热点之一。垂直磁各向异性纳米线其畴壁移动的临界电流密度远低于传统的面内磁化纳米线，最有希望在未来超高密度存储或逻辑器件中得到应用。本课题拟采用电子束曝光技术制备具有垂直磁各向异性的[Pt/FM]n/MgO基复合结构多层膜纳米线，研究其在脉冲电流作用下磁畴壁的运动规律以及物理机制。重点研究多层膜界面交换耦合对纳米线中畴壁移动的临界电流密度和局域电场作用下磁畴壁的钉扎特性的影响。通过调控FM/Pt、FM/MgO的界面特性有效地降低畴壁移动的临界电流密度。本研究开展对于磁畴壁基纳米器件的开发具有重要的指导意义和应用价值。

Since the discovery of current-induced magnetic domain walls (DWs) motion in magnetic nanowires, the nano-devices designed around DWs motion have become one of hot topics in spintronics recently. The nanowires with perpendicular magnetic anisotropy (PMA) are the most promising applied in future ultra-high density storage or logic devices due to their lower critical current density of DWs motion compared with in-plane magnetized nanowires. This project intends to research the physical laws and mechanisms of magnetic DWs motion under pulse current in the [Pt/FM]n/MgO based composite structure multilayer nanowires with PMA patterned by electron beam lithography. The emphasis is to understand the influences of the interface exchange coupling in multilayers on the critical current density and DWs’ pinning characteristics controlled by electric field to effectively reduce the critical current density of DWs motion through tuning the interfacial properties of FM/Pt and FM/MgO interfaces. The work has great guide meaning and application value in the development of magnetic DWs-based nano-devices.