绝缘衬底上石墨烯的PECVD低温制备、多维结构调控及其光电应用

石墨烯因其优异的光电性能而有广阔的应用前景。高质量石墨烯采用化学气相沉积（CVD）法制备，通常需要高温反应和繁琐转移的工序。因而，直接在绝缘衬底上低温生长石墨烯是其光电应用的关键。本项目拟发展等离子体增强CVD法在绝缘衬底上低温制备2D/3D石墨烯以及多维结构，开展石墨烯与半导体材料的原位复合，并应用于石墨烯基新概念原型器件。首先，研究生长温度、前驱物引入量和工作气压等参数对石墨烯生长的影响规律，分析石墨烯结构和性能间的内在关系，揭示生长机理；其次，利用化学掺杂和化学修饰调控石墨烯表面性质和光电性能；再次，探索石墨烯表面诱导生长TiO2和NiS等半导体材料的制备方法，研究石墨烯/半导体材料的界面键合、电子输运和光电响应特性等；最后，将石墨烯/半导体材料复合结构作为光阳极和对电极组装新型结构光电器件，优化器件中能带结构和功函数匹配性，集成出基于多维石墨烯结构的新型原型器件。

Graphene has widely potential applications due to outstanding optical and electrical properties, but the preparation of high-quality graphene by chemical vapor deposition (CVD) method generally involves in both high reaction temperature and complex transfer procedure. Therefore, direct low-temperature growth of graphene on dielectric substrates is the key to its optoelectronic applications. The project intends the development of plasma-enhanced CVD to prepare 2D/3D graphene and multi-dimensional structure on dielectric substrates at low temperature, carries out in-situ composites of graphene and semiconductor materials, and fabricates novel concept graphene-based prototype device. Firstly, studying the effects of experimental parameters such as growth temperature, precursor, work pressure,etc., analyzing the intrinsic relationship between structure and properties of graphene, and revealing the growth mechanism; Secondly, controlling surface characteristics and photoelectric properties of graphene by the use of chemical doping and chemically modification; Thirdly, exploring the preparation methods of semiconductor materials such as TiO2, NiS, etc., on the graphene surface, and studying the interface bonding, electron transport and photoelectric response characteristics of graphene/semiconductor materials; Finally, assembling new structure optoelectronic devices based on graphene/semiconductor materials as the photoanodes and counter electrodes, optimizing the band structure and work function match, and obtaining new concept prototype device based on graphene multi-dimensional structure.