硅基InAs/GaSb超晶格红外探测材料的MBE生长与特性研究

Si基InAs/GaSb Ⅱ类超晶格红外探测材料有成本低、机械强度高、探测波段可调谐、尺寸大等优点成为了红外探测和成像领域的研究热点。但是由于Si与InAs/GaSb超晶格材料在晶格常数、极性和热膨胀系数的差异，在材料制备过程中易产生极高的位错和反相畴密度，影响Si基InAs/GaSb Ⅱ类超晶格红外探测材料的性能。本项目利用MBE设备在Si（001）衬底上外延制备超晶格材料。重点研究Si衬底退火条件优化、低温GaSb成核层、高温GaSb缓冲层和GaSb/AlSb位错阻挡层的引入对材料质量的改善作用和机理，探明Si基InAs/GaSb超晶格红外探测材料的最佳制备工艺，为下一代低成本、大规模、高度集成的红外焦平面阵列提供理论基础和技术支撑。

Si-based InAs/GaSb infrared detection materials have the advantages of low cost, high mechanical strength, tunable detection band, and large size, which have become a research hotspot in the field of infrared detection and imaging. However, due to the difference in lattice constant, polarity, and thermal expansion coefficient between Si and InAs/GaSb superlattice materials, extremely high dislocations and antiphase domain densities are prone to occur during the material preparation process, which affects the infrared detection of Si-based InAs/GaSb The performance of the material. This project uses MBE equipment to epitaxially prepare superlattice materials on Si (001) substrates. Focus on the improvement of Si substrate annealing conditions, low-temperature GaSb nucleation layer, high-temperature GaSb buffer layer and GaSb/AlSb dislocation barrier layer on the improvement of material quality and mechanism, and to find out the best of Si-based InAs/GaSb infrared detection materials Optimal preparation technology provides theoretical foundation and technical support for the next generation of low-cost, large-scale, and highly integrated infrared focal plane arrays.