基于高迁移率材料InGaAs与Ge的MOSFET器件设计与电学特性研究

集成电路发展到了纳米尺度后，传统Si基MOSFET尺寸等比例缩小很难满足进一步提高性能和降低功耗的需求。在晶体管中引入高迁移率新沟道材料InGaAs和Ge被认为是继续提高晶体管性能的解决方案之一。本项目旨在研究异质集成InGaAs和Ge MOSFET器件的工作机理和优化设计，通过新材料使用和结构创新，克服InGaAs与Ge异质集成的困难，完成CMOS反相器电路设计；并且通过采用高迁移率沟道材料提高载流子输运特性，提高输出电流，降低功耗，探索其在低功耗高性能工作领域的应用前景。将新栅极氧化层和场氧化层材料引入器件制备中，并对新材料器件电学特性做仿真分析和可靠性评价。本项目以研究高性能低功耗场效应晶体管为目的，分析绝缘层上InGaAs nMOSFET器件和Ge pMOSFET器件的工作机理和优化方法，探索新材料新结构晶体管器件性能变化情况和对器件可靠性的影响。

The development of integrated circuits has reached the nanometer scale. The scaling down of the conventional Si-based MOSFETs is difficult to meet the need to further improve performance and reduce power consumption. The introduction of high mobility new channel materials, InGaAs and Ge, into transistors is considered to be one of the possible solutions to furthur improve transistor performance. This project aims to explore the design scheme and working mechanism about the heterogeneous integration of InGaAs and Ge MOSFET devices for CMOS invertors. Through the use of new materials and structural innovation, the heterogeneous integration of InGaAs and Ge can reduce off-state leakage current and static power consumption. Moreover, carrier transport characteristics and output current can be improved using high mobility channel. This is important for application of InGaAs and Ge in low power or high performance areas. This project aims to introduce new gate oxide and field oxide materials into device fabrication of the integrated process and perform simulation analysis and reliability evaluation on the electrical properties of new material devices. The goal of this project is to study the working mechanism and optimization method of InGaAs nMOSFET electronic devices and Ge pMOSFET electronic devices based on the research of high-performance low-power FETs. The project will also explore the electrical characteristics and reliability changes of new material and new structure transistor devices, especially in the application of CMOS inverters.