鳍式突触器件结构表面的二维WSe2/高k介质界面调控及应用

随着“后摩尔时代”到来，研究面向新型类脑神经计算的元器件是近年来的国际前沿和热点课题。新型二维材料WSe2具有优良电学特性和低热损耗优势，拥有在仿神经元器件中应用的巨大潜力。瞄准仿神经元器件的低功耗、高集成需求，本项目将基于鳍式场效应管器件结构，构筑并调控新型WSe2/高k电介质界面，发挥WOx的存储功能，设计构建新型鳍式突触器件：1）研究WSe2与掺杂高k介质的接触界面，探索缺陷分布与起源，调控优化界面质量；2）探究氧成分（x系数）对氧空位迁移、金属离子累积扩散等潜在忆阻机理影响，实现多类突触可塑性模拟；通过栅控电压调控WSe2沟道层导电性，获得神经调制机理模拟，实现多机制突触器件；3）获得低功耗、高集成的鳍式场效应管以及功能丰富的鳍式人工突触器件。本项目实施有望实现高性能WSe2鳍式人工突触器件，拓展二维材料与高k电介质的结合应用，为未来高集成类脑计算元器件提供可选方案。

As frontier research topics, research works about neuromorphic devices serving brain-inspired computing have attracted much attention. Meanwhile as newly-emerging two-dimensional material, tungsten diselenide (WSe2) has excellent electrical characteristics and low thermal loss, indicating its potential for applications in future electronic devices. Aiming at the required low-power and high-integration capabilities for neuromorphic devices, this project will combine WSe2 with high-k dielectrics and exploit functions of WOx on fin-FET architecture, designing and constructing fin synaptic device: 1) Interface between WSe2 and high-k dielectrics will be investigated meanwhile distribution and origins of interface defects will be explored, improving the interface quality. 2) Effects of x factor on underlying memristive mechanics, including oxygen vacancies migration, ions diffusion, will be explored, achieving simulation on various synaptic plasticities. Neuromodulation will be simulated by modifying conductance of WSe2 channel with gate voltage, obtaining synaptic device with multi-neuromorphic mechanics. 3) multifunctional fin synaptic device with low-power and high-integration capabilities, as well as fin transistor with high carrier mobility will be obtained. High-performance WSe2 fin synaptic devices will be achieved in this project, which helps explore prospects for combination between 2D materials and high-k dielectrics, meanwhile provide possible route for future devices serving brain-inspired computing.