有序结构聚合物纳米浮栅存储器材料构建与器件性能优化

构建大容量、长寿命、低功耗的高性能存储器是目前国际科技的前沿方向，也是《 “十三五”国家战略性新兴产业发展规划》提出的重点发展领域。以金属纳米粒子作为浮栅材料的纳米浮栅有机场效应晶体管非易失性存储器(NFGTM)被认为是最具潜力的下一代存储器之一。目前，NFGTM器件各功能层间的协同作用机理尚不明确，缺乏制备高性能纳米浮栅材料的方法。.本项目以聚合物接枝金属纳米粒子为基元，通过界面组装和外场调控等来构建结构有序的纳米浮栅阵列材料，深入研究载流子在纳米浮栅阵列中的注入模式、传输和损耗机理；探讨纳米粒子尺寸、间距和排列取向等对电荷俘获和存储的影响规律，明确纳米粒子功函数差异与器件性能间的对应关系。揭示浮栅层与隧穿层等存储功能层对电荷俘获和存储的协同作用机制。从微观角度揭示浮栅层内部微结构对NFGTM器件性能提升的影响机理，为大容量、低功耗、快速存储NFGTM器件的结构设计与性能提升提供新思路。

Preparation of high-performance memory devices with large data storage capacity, long-term stability and low-power consumption is one of the research frontiers in the world wide, and was also listed as the priority development area in the “13th five-year strategic new industry development plan” of China. Nano-floating-gate organic field-effect transistor non-volatile memory device (NFGTM), which utilizing metal nanoparticles as the floating-gate, is considered as one of the most valuable memory devices for the next generation. Yet, the synergistic mechanism between each functional layer has not been clarified so far. It still remains a big challenge to fabricate the high-performance nano-floating-gate materials in an effective route..In this project, we will select polymer-tethered metal nanoparticles as the building blocks, and combine the self-assembly and external-fields (e.g., electric field) induction technique to prepare nano-floating-gate arrays with well-ordered structures. We will systemically investigate the injection mode, transport and loss mechanism of charge carrier in the nano-floating-gate arrays. We will explore the effects of nanoparticle size, interparticle distance, orientation and spatial arrangement of nanoparticles on the charge capture and data storage. Also, we will investigate the influence of work function difference of metal nanoparticles on the performance of NFGTM device, and further reveal the synergistic mechanism of nano-floating-gate layer and tunneling layer on the charge capture and data storage..This project will establish the relationship between macroscopic performance of NFGTM memory and internal microstructure of the floating-gate layer, and reveal the enhancement factors and mechanism of the NFGTM device performance in the microscopic perspective. Our work will provide a new idea for the structural design and performance improvement of NFGTM device with large data storage capacity, low-power consumption, and fast storage.