高温表面和ECR混合强流硼离子源的研究

作为半导体芯片生产中一个极其重要的环节，离子注入机的水平成为衡量一个国家半导体芯片制造业水平的重要标志。所有的半导体电路都是由P型半导体和N型半导体组成，P型半导体一般由硼离子注入产生，N型半导体一般由磷、砷注入产生。其中硼由于其常用工作气体电离能级较高的原因，很难得到比较高的流强。以注入机中最常见的IHC源为例，硼的流强只有磷的50%。在P型和N型半导体同时需求且需求量相当的情况下，硼离子源的流强限制了半导体注入工艺的进一步发展。2.45 GHz ECR离子源作为一款结构简单、稳定好、流强高的离子源，是一款潜力巨大的注入机离子源，但传统的2.45GHz ECR源平均电子温度只有10eV,不具备产生强流硼离子的能力。为了进一步提高2.45 GHz ECR离子源内电子的温度，提升其产生硼离子的能力，本项目创新性地提出将高温表面到ECR离子源中，研制出一款新型强流半导体离子注入硼离子源。

The ion implanters has become an important indicator of the level of a country's semiconductor chip manufacturing industry. All semiconductor circuits are composed of P-type semiconductors and N-type semiconductors. P-type semiconductors are generally produced by boron ion implantation, and N-type semiconductors are generally produced by phosphorus and arsenic implantation. Among them, boron is difficult to obtain relatively high current strength due to the higher ionization energy level of its commonly used working gas. Taking the most common IHC source in the implanter as an example, the current of boron is 50% lower than that of phosphorus. When P-type and N-type semiconductors are simultaneously demanded and the demand is equivalent, the current of the boron ion source limits the further development of the semiconductor implantation process. The 2.45 GHz ECR ion source is an ion source with a simple structure, good stability, and high current. It is a potential implanter ion source. However, the average electron temperature of the traditional 2.45GHz ECR source is only 10eV, which is not capable of generating high current of boron ions. In order to increase the temperature of electrons in the 2.45 GHz ECR ion source and improve its ability to generate boron ions, this project innovatively proposes to incorporate high temperature surface into the ECR ion source and develop a new type of strong current semiconductor ion implantation boron ion source.