总剂量效应对低增益雪崩硅传感器的性能影响及机理研究

低增益雪崩硅传感器是近年来国际上的前沿热点，具有超高的时间分辨和一定的位置分辨，且随着位置分辨的提高极有希望在未来实现先进的4D探测，具有广泛的应用前景。除可应用于未来高亮度强子对撞机及先进光源大科学装置外，还可应用于近年来日益发展的核医学和航空航天事业中。但在以上场景成功应用前，低增益雪崩硅传感器还需具有抗辐照的能力。目前此技术的抗辐照研究，特别是对电离总剂量效应导致的面损伤尚有很多问题亟需解决。本项目拟通过辐照实验和计算机模拟相结合的方法，研究其面损伤导致的性能变化及敏感设计参数。辐照实验方面，拟设计高低剂量率实验，以具有不同设计参数的传感器为研究对象，研究其在超高剂量下的性能退化行为，高低剂量率影响的异同，敏感设计参数。模拟方面，拟通过蒙特卡罗模拟与电学性能模拟相结合的方式，探索其面损伤机制，优化敏感设计参数，提供抗辐照新方法。

Recently, the low gain avalanche diodes (LGAD) is the frontier of the detector study in the world. LGAD is the promising candidate for the 4D detector with the extreme high timing resolution and a certain of position resolution which is improving by the time. The LGAD could be applied in many fields, such as the future high luminosity large hardon collider、the future synchrotron radiation facility、the nuclear medicine and space exploration. However, before the successful application of the LGAD, it should be radiation hardness. There are still many problems need to be solved in the irradiation hardness study, especially the surface damage caused by the ionizing radiation. This study plans to research the radiation hardness and sensitive design factors caused by surface damage by the irradiation experiment and the computer simulation. The irradiation experiment is designed to irradiate the LGADs with different design parameters by the high and low dose rate irradiation. The aim of the irradiation experiment is to study the performance degradation of the LGAD after ultra-high dose irradiation and the difference of the effects of high and low dose rate irradiation. The irradiation experiment could also pick out the radiation hardness LGAD sensors directly. The simulation is proposed to explore the surface damage mechanism by combining Monte Carlo simulation with electrical performance simulation. The simulation could find out the sensitive design parameters , which could also provide new methods of irradiation hardness design.