金刚石肖特基雪崩探测机制与实现方法研究
批准号:
52102163
项目类别:
青年科学基金项目(C类)
资助金额:
30.0 万元
负责人:
刘康
依托单位:
学科分类:
无机非金属半导体与信息功能材料
结题年份:
2024
批准年份:
2021
项目状态:
已结题
项目参与者:
刘康
中文摘要
拥有与“5S”探测要求匹配的“终极半导体”材料特性使得金刚石被认为是最佳日盲探测材料。然而,受限于浅能级n型掺杂技术瓶颈,目前为止,文献中所报道的都是基于金刚石材料的光电效应实现探测,罕见有关于金刚石雪崩探测的报道。申请人最近发现:不同于传统窄带隙半导体材料,酮基氧终端可以在电子级金刚石表面产生2.26eV的高内建电场。该发现启发申请人提出以高纯度低缺陷密度的电子级金刚石为探测材料,以终端表面态钉扎高内建电场肖特基结构建雪崩倍增区的雪崩方案。项目围绕“既要终端构建出高内建电场,又要兼顾避免终端表面态引入陷阱中心”的技术难点,拟重点解决“高内建电场肖特基方案预测”并揭示“金刚石表面终端对非平衡载流子寿命的影响机制”,从而建立起金刚石肖特基雪崩探测理论,研制出金刚石肖特基雪崩探测原理样件。本项目的实施,有望弥补金刚石雪崩探测机制缺口,实现金刚石雪崩探测。
英文摘要
Diamond is considered to be the best solar blind detection material because of its "ultimate semiconductor" material characteristics matching the "5S" detection requirements. However, limited by the bottleneck of shallow level n-type doping technology, so far, all the reports in the literature are based on the photoelectric effect of diamond materials to achieve detection, and there are rare reports on Diamond avalanche detection. The applicant recently found that, unlike traditional narrow-band gap semiconductor materials, ketone based oxygen terminals can generate a high built-in electric field of 2.26 eV on the surface of electronic grade diamond. This discovery inspires the applicant to propose an avalanche multiplication scheme, in which the electronic grade diamond with high purity and low defect density is used as the detection material, and the high built-in electric field Schottky junction pinned by the terminal surface state is served as avalanche multiplication region. The project focuses on the technical difficulty of "not only building high built-in electric field by terminal, but also avoiding the introduction of trap center due to terminal surface state", and intends to focus on the key scientific issues of "prediction of high built-in electric field Schottky scheme" and "influence mechanism of diamond surface terminal on non-equilibrium carrier lifetime", so as to establish the diamond Schottky avalanche detection theory, and develop the principle sample of diamond Schottky avalanche detection. The implementation of this project is expected to make up for the gap of diamond avalanche detection mechanism and realize diamond avalanche detection.
拥有与“5S”探测要求匹配的“终极半导体”材料特性使得金刚石被认为是最佳日盲探测材料。然而,受限于浅能级n型掺杂技术瓶颈,本研究启动之时,文献中所报道的都是基于金刚石材料的光电效应实现探测,罕见有关于金刚石雪崩探测的报道。本研究启动之初发现:不同于传统窄带隙半导体材料,酮基氧终端可以在电子级金刚石表面产生2.26V的高内建电势。在该发现的启发下,本研究提出了以高纯度低缺陷密度的电子级金刚石为探测材料,以终端表面态钉扎高内建电场肖特基结构建雪崩倍增区的雪崩方案。在此方案指导下,生长出了电子级金刚石,发展出了宽禁带半导体结分析模型,在此基础上分析了氧终端钉扎下的金刚石肖特基结中的电场分布,确认了金刚石肖特基结存在高达10^5V/cm的电场强度,研制出了金刚石肖特基雪崩探测原理样件,增益因子高达1500。本研究建立起了金刚石肖特基雪崩探测理论,弥补了金刚石雪崩探测机制缺口,为宽禁带半导体日盲高增益探测奠定了理论与技术基础。
表面态钉扎pn结概念提出与验证
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批准号:52372043
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项目类别:面上项目
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资助金额:50万元
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批准年份:2023
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负责人:刘康
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依托单位:
国内基金
海外基金