基于石墨烯/CrX3(X=Cl,Br,I)异质结电输运邻近效应的调控研究

邻近效应可以将相邻材料的磁性和自旋-轨道耦合引入到石墨烯电子体系中，为石墨烯能带的调控提供了一种简单有效手段。通过调控邻近效应强度对石墨烯能带产生不同的修饰效果，进而实现不同能态的转换，能够解决石墨烯在未来电子学器件领域应用的重要问题。然而，当前对石墨烯邻近效应的研究中，还未见通过调节邻近效应的强度以实现不同量子态调控的报道。本项目拟通过层层转移的方法制备氮化硼封装的石墨烯/二维磁性绝缘材料CrX3(X=Cl，Br，I)异质结，系统研究CrX3体系二维磁性材料对石墨烯邻近效应的输运行为。此异质结结构具有原子级锐利度的邻近界面，氮化硼的封装还能使石墨烯的迁移率接近理论极限，实现在本征石墨烯电子态中研究邻近效应的作用。薄层CrX3体系材料的磁性还能被门电压调控，进而对石墨烯诱导出不同强度的邻近效应，实现不同量子态的转变。

The proximity effect introduces the magnetism and spin-orbit coupling of adjacent materials into graphene’s electronic system, which provides a simple and effective methods to modify graphene’s band structures. The transition of different energy states can be achieved by adjusting the intensity of proximity effect to produce different modification band structures of graphene, solving graphene’s application problem in the field of electronic devices in the future. However, there is no report of different quantum states transition of graphene through the manipulation of proximity effect. This project aims to fabricate the heterostructures of graphene/ CrX3(X= Cl, Br, I) encapsulated with hexagonal boron nitride by dry transfer method to study graphene’s proximity effect, and systematically study graphene’s electron transport influenced by the proximity effect induced by two-dimensional magnetic materials. Atomically sharp interface of this heterostructures can promote the proximity effect and increase the mobility of graphene to its intrinsic limit, which allows to study the intrinsic quantum phenomena of graphene induced by proximity effect. The magnetic properties of thin layer CrX3 system materials can also be adjusted by gate voltage, thus inducing different intensity of proximity effect on graphene’s electron system and further realizing different quantum state transition.