La2/3Ba1/3MnO3/Nb:STO异质结中基于电致电阻效应的电控磁效应研究

基于电致电阻效应机制的电控磁效应由于具有非易失性和与传统的CMOS制备工艺相兼容的特点，成为电控磁效应研究的热点。但在研究中存在以下主要问题：（1）需要寻找合适的材料体系去探索室温下电控磁效应。（2）需要探索新的机制去实现室温下具有较大磁电系数的电控磁效应。（3）需要获得具有稳定磁响应的电控磁效应。La2/3Ba1/2MnO3是典型的室温铁磁材料，其磁性易受到氧空位浓度的调制。利用这一特性，本项目将研究La2/3Ba1/2MnO3薄膜中的电控磁效应。构造结构为Au/LBMO/Nb:STO的器件，利用电场作用下LBMO/Nb:STO界面处氧空位的积聚与耗尽机制，实现室温下的非易失性的电控磁效应。选择合适的LBMO薄膜厚度，实现对电控磁效应的进一步增强。通过调节制备参数，对LBMO薄膜结晶度和LBMO/Nb:STO界面质量进行优化，获得具有稳定磁响应的电控磁效应。

The electric field controlled magnetism effect based on resistive switching effect has become a hotspot research due to its non-volatile characteristics and compatible with traditional CMOS processes. Up to now, the main issues existed in this field are as follows: (1)It is urged to find a suitable material system to explore new material system to obtain electric field controlled magnetism effect at room temperature. (2)It is necessary to explore new mechanisms to realize the electrically controlled magnetic effect with a large magnetoelectric coefficient at room temperature. (3)It is necessary to obtain the electric field controlled magnetism effect with stable magnetic response. La2/3ba1/2MnO3(LBMO) is a typical room temperature ferromagnetic material,whose magnetism is easily regulated by oxygen vacancy concentration.In this project, we will study the electric field controlled magnetism effect in LBMO magnetoelectric films.Taking the advantage of the accumulation and depletion of oxygen vacancies driven by electric field at the interface of LBMO/Nb:STO,large electrical controlled magnetization is obtained at room temperature. Corresponding appropriatefilm thickness of LBMO film is selected for the further enhancement of electric field controlled magnetism effect. The crystallinity of LBMO films and the quality of the LBMO/Nb:STO interface are optimized by adjusting the preparation parameters for more stable magnetic response.This work can offer experimental and theoretic evidence for the exploration of the mechasim for electric field controlled magnetism effect and the design of the magnetoelectric devices.