基于双层CrI3二维范德华自旋电子器件自旋输运的理论研究

自旋电子器件由于具有功耗低、速度快和非易失性等优势,在信息技术领域备受关注。但传统磁性隧穿结因费米能级钉扎效应、隧穿层的质量不稳定和自旋弛豫问题，难以有效操控自旋输运过程实现大自旋极化和高隧穿磁阻。近年来双层CrI3因其层间磁耦合的特性在自旋电子学领域备受关注。本项目拟筛选出一系列与双层CrI3晶格匹配且费米能级分布在双层CrI3带隙中的二维非磁性金属，构建基于以双层CrI3 为通道区和二维非磁性金属为双电极的二维范德华磁性器件，通过第一性原理输运计算基于双层CrI3的自旋电子器件的自旋极化和隧穿磁阻。借助界面干净、平整且费米钉扎效应弱的二维范德华金属-双层CrI3结有望实现可调控的均匀隧穿，同时双层CrI3的本征磁性可保持通道的自旋极化状态。本项目研究有助于理解自旋电子器件隧穿磁阻效应的微观机理，对提升器件的自旋输运性能有重要的指导作用。

Spintronic devices have attracted intensive interest due to the potential advantages of low energy consumption, speeding up data processing, and non-volatility. However, traditional magnetic tunnel junctions (MTJs) faces a big challenges: manipulation of spin transport, due to the Fermi level pinning effect、tunneling non-uniformity and the spin relaxation of the tunnel barrier. Recently, bilayer CrI3 has become one of the hot spots in spintronics due to its magnetic properties of interlayer magnetic coupling. The main contents of the project include: to screen out a group of 2D non-magnetic metals, to construct a set of two-terminal 2D van der Waals (vdW) spintronic devices devices with bilayer CrI3 channel, to systematically explore the spin-polarized and tunnel magnetoresistance of 2D vdW magnetic devices by using first-principles transport calculations. The presence of 2D vdW metal-bilayer CrI3 junctions can achieve the tunable uniform tunnel with the clean and flat interfaces, due to the weak Fermi level pining effect. On the other hand, the intrinsic magnetism of bilayer CrI3 can ensure the spin-polarized of the channel. This research project will not only play an important role in understanding the microscopic mechanism of the tunnel magnetoresistance effect of spintronic devices, but also provide important information for improving the spin transport performance of spintronic devices.