简便快速bottom-up法制备含氮空位中心的纳米金刚石晶体

利用氮空位(简称NV)中心的研究可以实现许多新兴领域的应用。本项目致力于开拓一步bottom-up法简便快速制备含NV中心的纳米金刚石晶体。采用高功率微波等离子体化学气相沉积（简称MPCVD）法，通过调节少量氮气和氧气的添加量和采用不同的实验方法来控制衬底温度等生长参数，找出含氮纳米金刚石膜特别是高定向尤其是<100>高定向的含氮纳米金刚石膜的生长方法和条件及其生长规律。通过多种表征手段和研究方法尤其是一些新拓展的傅里叶红外光谱法对获得的纳米金刚石膜的性能（晶粒大小、微结构、织构和定向等）和氮氢空位等缺陷杂质结合情况（量化、形式、位置和分布等）进行深入分析。该研究有助于澄清MPCVD法制备NCD的形成机理和缺陷杂质结合机制。通过对一些与氮氢有关的新红外峰的起源认定和结构分析来确立NV中心与生长条件之间的关联，从而实现能够有效调控NV中心结合的快速生长纳米金刚石晶体的bottom-up 法。

It is well known that nitrogen-vacancy (NV) centers attract worldwide attention, because it has huge potential in many new application fields. Highly oriented diamond nano- and micro-structures are highly desirable for many applications. So far, there is no report on direct fabrication of nanodiamond crystals containing NV centers using bottom-up approach. In this project, we aim at exploring bottom-up method for direct fabrication of highly oriented nitrogen-doped nanocrystalline diamond films of high growth rate. For this work, we will establish new operating parameter window to grow nanocrystalline diamond films by using high power microwave plasma chemical vapour deposition system. The growth rate, grain size, microstructure, texture and orientation, and incorporation of nitrogen and hydrogen impurities of the nitrogen-doped nanocrystalline diamond films can be tuned and controlled by the operating growth parameters and through the use of different experimental approaches. The relationship between the growth conditions and the film characteristics such as grain size, orientation, nitrogen defects will be established. This research will provide an effective method for using bottom-up approach to produce diamond nanocrystal containing NV centers for quantum computer and photonic crystal applications.