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基于光电导线性调控的可调谐强电磁脉冲源及其兆赫兹重频运行特性研究

批准号:
62101577
项目类别:
青年科学基金项目(C类)
资助金额:
30.0 万元
负责人:
王朗宁
学科分类:
电磁场与波
结题年份:
2024
批准年份:
2021
项目状态:
已结题
项目参与者:
王朗宁

项目摘要

结项摘要

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中文摘要
高功率、高重复频率和宽参数调谐的强电磁脉冲源在国防和经济领域有重要的应用价值。现有的超高重频电磁脉冲源,主要通过固态电开关的快速导通或关断特性,直接产生时域冲激窄脉冲,其输出频谱表现为超宽谱且中心频率参数固定。本项目拟采用宽禁带钒掺杂碳化硅,利用其高功率容量和光电响应速度快的优异特性,基于其非本征光电导线性调控机制,产生可调谐中心频率、兆赫兹重复频率的电磁脉冲。通过理论、仿真与实验相结合的方式,研究该材料杂质能级在非本征光生载流子的产生、输运及复合过程中的影响机制,完善器件物理模型;通过模型优选材料并构筑全内反射光捕获器件结构,降低器件导通阻抗和匀化光生电流分布,提高器件功率容量和运行寿命;研究与之匹配的射频传输技术,完成初步系统实验,产生峰值功率10kW、重频MHz、脉宽5ns、中心频率多倍频程可调(0.5-5GHz)电磁脉冲。研究能为超高重频自适应电磁信息对抗系统提供技术支撑。
英文摘要
The frequency agile, high repetitive rate and high power are the trends promoting the development of high power electromagnetic pulse technology and high power microwave technology, to meet the civil and military requirements. The fast closing or opening (switching time at order of 100 ps) switches are widely used to generate a short pulse with an ultrawide spectrum and its central-frequency is fixed or difficult to change. In this study, the extrinsic linear photoconductive semiconductor devices are used to generate the high power electromagnetic pulse with tunable central-frequency and high repetitive rate. Vanadium compensated semi-insulating SiC is used because of its essential characteristics: high-power and fast photoelectric response speed. With a combined method of theoretical modeling, simulation and experimental research, this program firstly focuses on the effects of impurity energy level on the generation, transportation and recombination of the extrinsic photo induced carriers. The physical model of the device is constructed and the model parameters are improved based on the mechanism analysis. Then, the SiC material can be selected by the mechanism analysis and improved model to achieve high photoelectric conversion efficiency, and a total internal optical-reflection trapping device structure is proposed to increase the extrinsic light absorption and make the distribution of the photocurrent density uniform in the SiC material, so the lifetime and power of the device can increase. Meanwhile, the technology of the large power radio-frequency circuit should be matched to develop the preliminary system experiment. Based on those studies, electromagnetic pulses can be generated with 10 kW peak power, MHz repetitive rate, 5 ns pulse duration and a tunable broadband central-frequency (0.5-5 GHz) , and this work can lay the foundation and theoretical references for the research of frequency agile, high repetitive rate and high power electromagnetic pulse system.
传统高功率微波产生主要基于相对论电真空器件,由于其输出微波参数通常固定或难以宽范围调节,长时间工作的可靠性和稳定性有一定的局限性,这些都限制了高功率微波系统的进一步发展。随着固态功率开关技术和半导体材料技术的快速革新,利用光导半导体开关产生高功率射频微波的方式受到广泛关注,在功率合成和频率连续可调等方面具有巨大潜力。本项目结合4H-SiC宽禁带光导开关器件,研制了高重频、宽频段可调谐光导微波产生系统,并对其相关的关键技术和物理问题进行了深入研究。研制了MHz高重频可调谐超宽谱光导微波产生系统。分析了光导器件电路杂散参数对于器件阻抗和输出光电流的影响,采用电路模拟方法进行验证,总结得到了光导器件衬底厚度的设计原则。构建了基于垂直电极4H-SiC光导器件的高重频响应测试系统,研究了该测试系统对于不同宽度光脉冲的响应能力,实现了MHz高重频可调谐强电磁脉冲产生,并且具备主频调谐能力。为进一步提升系统输出效率,设计了基于垂直电极型光导开关器件的脉冲传输结构,得到了0.5 MHz~2.0 MHz重频连续可调的光导微波射频输出,器件功率容量达100kW。研制了0.5 GHz~10 GHz宽频段可调谐窄谱光导微波产生系统。分析了垂直电极型4H-SiC光导器件在高频响应方面的局限性,优化设计了基于平面电极光导器件的高速微带传输线电路,建立了微带线与平面电极光导器件的匹配模型,仿真验证了该电路对于10 GHz高频脉冲信号的响应输出能力。研制了一种基于平面电极型光导器件的宽频窄谱可调谐微波产生系统,在实验中可以获得0.5 GHz~10 GHz宽频范围连续可调谐的微波输出。
MHz 重复频率大功率碳化硅光电导器件关键技术研究
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