基于强关联钙钛矿氧化物迁移率带边型和电荷转移型铁电场效应晶体管的研究

在当今高速发展的数据信息时代，铁电场效应晶体管有望把信息存储和逻辑运算融合在同一器件中，在半导体工业界占据十分重要位置。铁电场效应晶体管开关比是其发展应用的的关键科学问题。本项目融合材料学和半导体学这两个学科领域各自的优点，旨在借助高质量原子级平整的薄膜生长核心技术，利用铁电场效应调控迁移率带边的金属绝缘体相变和利用电荷转移效应突破Thomas-Fermi电荷屏蔽长度，研究电绝缘死层、电荷转移量和铁电场效应晶体管开关比的内在关联，揭示铁电场调节界面载流子和沟道电阻的物理机制，探明有效调控沟道材料电阻的规律，最终实现提高铁电场效应晶体管开关比的目的，解决铁电场效应晶体管一直以来低开关比的挑战性问题，在铁电场调控方面开辟一个独特路径，为开发新型高开关比铁电场效应晶体管和推动其大规模功能化应用提供指导思路。

In today's rapidly developing of information data era, ferroelectric field effect transistors (FeFET) are expected to integrate memory and logic function into one device, which plays an important role in the semiconductor industry. The ON/OFF ratio of FeFET is a key basic issue for the application. This project integrates the advantages of material science and semiconductor science. We will study the FeFET of the mobility edge induced metal-insulator transition and the FeFET of charge transfer extended Thomas -Fermi screening length with the help of high quality atomic smooth growth technique. We will study the intrinsic relation among electrical dead layer, charge transfer and ON/OFF ratio of FeFET, revealing the mechanism of ferroelectric field induced manipulation of carriers and resistance and the effective rules to modulate channel resistance. Hopefully, we can improve the ON/OFF ratio of FeFET and solve the challenge of low ON/OFF ratio of FeFET. In this project, we provide a new unique electric manipulating way to improve the ON/OFF ratio of FeFET and help the industrialization of FeFET.