外延生长Ni-Mn-Ga薄膜的马氏体相变与磁化行为机理研究
批准号:
52071071
项目类别:
面上项目
资助金额:
58.0 万元
负责人:
杨波
依托单位:
学科分类:
金属功能材料
结题年份:
2024
批准年份:
2020
项目状态:
已结题
项目参与者:
杨波
中文摘要
外延生长Ni–Mn-Ga哈斯勒合金薄膜具有多种优异的磁控功能行为,是智能传感驱动、新型固态制冷等领域中极具前景的候选材料。然而,对于目前研究较多的母相奥氏体为<001>取向的外延生长Ni–Mn-Ga薄膜,其复杂的多尺度微观组织、多种取向并存的马氏体变体组态,阻碍了磁场诱发马氏体变体再取向的发生,导致此类薄膜尚未获得大磁致应变。本项目从马氏体相变的取向关系入手,提出利用MgO(111)基板制备出母相奥氏体为<110>取向且只存在单一马氏体变体团的Ni–Mn-Ga合金薄膜,重点研究此类薄膜中只存在单一马氏体变体团的根本原因,阐明马氏体相变过程的变体选择机制,揭示其磁滞回线上存在两段“磁矩跳跃”现象的物理本质以及可逆磁场诱发马氏体变体再取向的机理,据此构建可逆磁场诱发马氏体变体再取向的理论模型,进而开发出磁控功能行为优异的薄膜,以期为外延生长Ni–Mn-Ga合金薄膜走向实用奠定理论和技术基础。
英文摘要
Epitaxial Ni–Mn-Ga Heusler alloy thin films are convinced as promising candidate materials in smart sensors and actuators, and solid-state refrigerators, owing to their excellent performances such as magnetic-field induced strain and magnetocaloric effect. However, for the epitaxial growth of Ni-Mn-Ga films with parent phase austenite < 001 > orientation, the complex multi-scale microstructure and the coexisting martensitic variant configuration hinder the occurrence of magnetic field induced martensitic variant reorientation, which results in the absence of large magnetic strain. Taking into account the orientation relationships of martensitic transformation, the present project intends to prepare epitaxial Ni-Mn-Ga alloy films on MgO(1 1 1) substrate with < 110 > orientation of parent phase austenite, which contain only a single martensite group having their martensite plate interfaces parallel to the substrate surface. The fundamental reason for the existence of only a single martensitic group in these films will be mainly studied. The mechanisms of martensite variant selection during martensitic transformation, reversible magnetic-field induced reorientation of martensite variants and the nature of “magnetization jump” in step like magnetic hysteresis loops will be explored and addressed. Besides, theoretical models will be developed for reversible magnetic-field induced martensite variant reorientation, being served as the guides to produce thin films with excellent performances. The present work will offer theoretical foundation and practical significance for the application of epitaxial Ni–Mn-based alloy thin films in micro-nano sensor and actuator devices.
外延生长Ni-Mn-Ga合金薄膜作为智能传感驱动、固态制冷等领域的候选材料,具有多种优异的磁控功能行为。然而,<100>取向的Ni-Mn-Ga薄膜中复杂的微观组织和多种取向并存的马氏体变体阻碍了其大磁致应变的实现。本项目针对此问题展开研究,(1)首先,采用磁光克尔显微镜原位观察了<100>取向薄膜的磁畴变化,发现磁滞回线上的“磁矩跳跃”源于磁畴移动,而非马氏体变体再取向。(2)随后,利用MgO(111)和Al2O3(110)基板制备出(110)A取向的Ni-Mn-Ga薄膜,并研究了化学成分和厚度等参数对其微观组织、晶体结构和磁性能的影响。结果显示,Al2O3(110)基板更适合制备<110>A取向的薄膜。在200nm厚的MgO(111)\(110)A取向的Ni48.65Mn28.94Ga22.41薄膜中,发现了磁场诱发马氏体重取向。(3)进一步,采用晶体学计算方法,计算(110)A取向薄膜发生马氏体相变时的位移梯度张量,从应变角度解释只形成(110)A变体团的原因。计算表明,只有(110)A晶面发生马氏体相变时,薄膜的面外切应变能消除,而其他晶面则产生较大的面内和面外切应变,导致切应变不能消除。本项目成功解析了外延生长Ni-Mn-Ga薄膜中7M马氏体的晶体结构及变体取向分布与微观组织间的内在联系,揭示了其马氏体相变过程及晶体学取向关系。通过调控薄膜的晶体学取向,本项目最终实现了大磁场诱发应变,以期为Ni-Mn-Ga薄膜在智能传感驱动、固态制冷等领域的应用提供理论基础和技术支持。
a轴取向MnCoSi基合金的马氏体变体组态调控与低温磁致伸缩性能研究
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批准号:--
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项目类别:面上项目
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资助金额:54万元
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批准年份:2022
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负责人:杨波
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依托单位:
面内应变对外延生长Ni-Mn-Ga薄膜中7M马氏体变体数量的影响及其机理研究
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批准号:51601033
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项目类别:青年科学基金项目
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资助金额:20.0万元
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批准年份:2016
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负责人:杨波
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依托单位:
国内基金
海外基金