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Cu/SiCw无孔隙复合电沉积机理及热机械性能研究

批准号:
62104151
项目类别:
青年科学基金项目(C类)
资助金额:
30.0 万元
负责人:
赖丽燕
依托单位:
学科分类:
集成电路器件、制造与封装
结题年份:
2024
批准年份:
2021
项目状态:
已结题
项目参与者:
赖丽燕

项目摘要

结项摘要

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中文摘要
随着半导体技术进步,芯片散热成为制约功率电子系统能力提升的主要障碍,高性能热沉材料创新开发受到高度重视。Cu/SiCp被公认为下一代热沉材料开发最佳方向,虽经该领域专家多年攻关但仍未成功,主要是因为高温合成过程中Cu与SiC之间的剧烈界面反应导致复合材料热导率远低于预期,并已成为亟待突破的行业技术瓶颈。本项目提出一种复合电镀制备无孔隙Cu/SiCw热沉材料的新工艺路线,以低温工艺(复合电沉积)代替高温合成,从根源上解决传统制备工艺存在的致命难题;以机械强度和热导率超高的SiCw代替传统SiCp以进一步增强其热、机械性;以无孔隙复合电沉积机制根除SiCw增强的复合材料孔隙率高的痼疾,开发一种综合性能优越的新一代热沉材料,建立Cu/SiCw基UV-LIGA成套工艺,研制冷却能力≥1kW/cm2的微通道热沉。最后测试并评估其综合性能,验证Cu/SiCw热沉材料创新开发思想的合理性和可行性。
英文摘要
With the advancement of semiconductor technology, chip heat dissipation has become a major obstacle restricting the improvement of power electronic systems. Therefore, the innovative development of high-performance heat sink materials has been highly valued. Copper-based silicon carbide particle composite (Cu/SiCp) is recognized as the best direction for the development of next-generation heat sink materials. However, after many years of research, it is still unsuccessful. The reason is that there will be a violent interfacial reaction between the base metal Cu and the reinforcing phase material SiC during the high-temperature synthesis process, resulting in the thermal conductivity of the composite material being much lower than expected, which has become a key technical bottleneck that needs to be broken. . This project proposes a new process route for preparing non-porous Cu/SiCw heat sink materials by composite electroplating, replacing high-temperature synthesis with a low-temperature process (composite electrodeposition), and solving the fatal problems of traditional preparation processes from the root. Using SiCw with ultra-high mechanical strength and thermal conductivity instead of traditional SiCp to further enhance its thermal and mechanical properties. Using non porous composite electrodeposition mechanism to eliminate SiCw enhancement. A new generation of heat sink material with excellent comprehensive performance was developed. A complete set of Cu / SiCw based UV-LIGA process was established, and a microchannel heat sink with cooling capacity ≥ 1kW/cm2 was developed. Finally, its comprehensive performance is tested and evaluated to verify the rationality and feasibility of the innovative development idea of Cu / SiCw heat sink material.
随着电子设备朝着纤薄、高功率密度和小型化的方向发展,对散热的需求急剧增加,高性能热沉材料创新开发受到高度重视。本项目主要研究内容和研究结果:(1)利用酸洗、碱洗、敏化、活化和转化等成套表面处理方法对SiCw表面进行金属化预处理,使其表面形成纳米表面修饰层。(2)利用电沉积方法制备SiCw增强铜基复合材料,并结合镀层表/断面情况和微观组织演变对其进行了系统的优化研究,包括电镀液体系、温度、电流密度和增强体含量等参数,发现在25 ℃、10 mA/cm2电流密度下,采用合适的晶体生长方式和生长速率,制备出了均匀致密的Cu-SiCw复合材料,工艺参数对复合材料中SiCw的含量影响不大,但对复合材料的表面形貌影响较大。(3)利用应力应变拉伸技术和热导测试技术对Cu-SiCw复合材料的热/力学性质进行了研究,随着SiC晶须含量的增加,复合材料的强度从197 MPa提高到420 MPa,拉伸率从16.0%下降到3.28%。SiCw对Cu基体的增强作用主要是Orowan机理和负载转移作用。当SiCw含量为0.5g/L时,复合材料的热导率达到340W/m·K,比基体高出约20W/(m·K)。(4)利用Cu/SiCw材料高深宽比和多层叠加集成制造关键工艺,与无孔电沉积、异质集成键合等单元技术,设计并研制具有超高热流密度散热能力的碳化硅晶须增强铜基微通道热沉样品,通过微通道热沉的测试,其散热效率达到1105W/cm2, 结果验证了研究方案的科学合理性和可行性。本项目不仅具有重要的基础研究意义,有望为超高热流密度芯片散热难题提供有力支撑,促进我国高功率器件技术领先发展。
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