高质量带隙可调铌酸钾基铁电薄膜的制备及物性研究

铌酸钾基铁电体是近年来新开发出来的一类带隙可调的半导体材料，因具有制备成本低、结构与性能稳定、环境友好等特点而备受关注。然而关于铌酸钾基铁电薄膜的制备、结构与物性的研究却相对较少。本项目将在已有工作基础上，以钡镍元素共掺形成的铌酸钾-铌镍酸钡薄膜为主要研究对象，围绕高质量铌酸钾-铌镍酸钡薄膜材料的关键制备技术；铌酸钾-铌镍酸钡薄膜的微结构与铁电、介电性能之间的关联；铌酸钾-铌镍酸钡薄膜漏电流的产生机制及其有效抑制方法；铌酸钾-铌镍酸钡铁电薄膜的光学性质；铌酸钾-铌镍酸钡铁电薄膜光伏器件的光电响应特性等内容进行重点攻关。项目的预期研究成果不仅对进一步了解高质量带隙可调无铅铁电薄膜结构与物性的关系、漏电流的形成机理与调控手段、影响材料光吸收与制约薄膜光伏器件光电响应的主要因素等基本科学问题具有重要意义，同时对促进该类材料在光电传感和光伏发电技术领域的应用也具有积极作用。

KNbO3-based ferroelectrics have been developed as a new type of narrow-bandgap semiconductor materials in recent years. They have triggered intense attention due to their many unique advantages, such as low cost, stable structure and performance, good photovoltaic properties and environmental friendliness. However, there are few studies on the preparation, structure and physical properties of the KNbO3-based ferroelectric films. Based on our previous work, this project focuses on the key preparation technique of barium and nickel co-doped potassium niobate (1-x)KNbO3-xBaNi0.5Nb0.5O3-δ (KN-xBNNO) thin films. We investigate the correlation between the microstructure and dielectric, ferroelectric properties. The formation mechanism of leakage current of the films and its effective suppression methods are studied. Then, we investigate the optical properties of KN-xBNNO thin films and fabricate ferroelectric photovoltaic devices to explore the photoelectric response behavior. The expected research results will help us to understand the correlation between the film microstructure and physical properties, the leakage current mechanism and regulation means, as well as the main factors that influence the light absorption and photoelectric response. In addition, the study in this project can also promote the application of this type of materials in the field of photoelectric sensing and photovoltaic power generation technology.