基于能带调制的二维PdSe2室温降噪与中红外宽谱探测性能研究

面向中红外波段的光电探测器在国防军事、医疗诊断、环境监测、智能仿生等领域有着重要而广阔的应用前景。目前，由于非制冷型光子探测器件性能难以满足实际应用需求，该探测系统面临着制冷结构复杂、成本高且难于集成的发展瓶颈，根本原因是红外探测材料室温下暗电流大，器件噪声明显，严重阻碍性能提升。如何减小暗电流对光信号的干扰作用是非制冷型探测器件迈向实际应用所面临的关键问题。本项目聚焦此难题，提出利用电子能带结构设计，控制材料电子分布从而减小暗电流的降噪方法。拟优选过渡金属硫属化物二硒化钯为代表材料，结合其缺陷敏感性和宽谱探测潜在性能，通过揭示晶格缺陷对二硒化钯能带结构的调制机理，设计最利于减小暗电流的材料结构，控制和优化薄膜生长和空位缺陷引入，实现暗电流噪声有效抑制和室温中红外探测性能大幅提升，使其成为非制冷中红外光电子应用的候选材料，为下一代光电器件及系统研究提供理论支持并奠定科学基础。

Mid-infrared photodetectors have broad application prospects in the fields of national defense and military, biomedicine, environmental monitoring and intelligent bionics. At present, the mid-infrared detection system faces serious difficulties limited by the unsatisfactory performance of uncooled detection devices, such as complex refrigerate structure, high cost, and not easy to integration, resulted from the large dark current noise of detection material at room temperature. How to reduce the interference effect of dark current on the light-generated signal is a key issue for the practical application of uncooled detection devices. In this project, a novel noise reduction method will be proposed by controlling electronic distribution through the design of electronic energy band structure and as a result, the dark current reduce. Taking palladium selenide(PdSe2) material as the research object, combined with its defect sensitivity and broad-spectrum detection potential, we will investigate the modulation mechanism of lattice defects on the PdSe2 band structure, and design an optimum structure for reducing dark current. Furthermore, the controllable preparation of thin film with vacancy defects will be studied. Based on above, the effective suppression of dark current noise and substantial improvement in uncooled mid-infrared detection performance will be achieved. This project might make PdSe2 a candidate material for the uncooled mid-infrared devices and will inspire the next generation of optoelectronic devices and systems.