二维范德瓦尔斯材料中的拓扑磁结构研究

二维范德瓦尔斯（2D-vdW）材料表现出优异的物理特性，并且由于易合成、易剥离、易于制备异质结等特点，使其具有重要的应用价值。最近研究发现，2D-vdW材料中（Fe3GeTe2、YbNi3Al9等）存在拓扑磁结构（如磁斯格明子、磁孤子等）。拓扑磁结构具有拓扑保护、纳米尺度、小电流驱动等特性，基于此的自旋电子学器件具有高稳定性、高存储密度、低功耗的特点。因此，具有拓扑磁结构的2D-vdW材料结合二者的优势，开辟了拓扑自旋电子学应用的新领域。本项目拟对2D-vdW材料中的拓扑磁结构进行研究，探索新型拓扑磁结构2D-vdW材料，对其磁构型、拓扑霍尔效应、磁阻效应等进行研究，揭示其运动和传输的动力学规律，阐明其形成和相互作用的物理机制，探索该体系中多种自由度和多种能量之间竞争耦合机理。本项目的开展不仅对揭示2D-vdW体系的低维磁性具有重要的物理意义，而且为其在拓扑自旋电子学中的应用提供物理依据。

Two-dimensional van der Waals (2D-vdW) materials exhibit many excellent physical properties. Due to easy synthesis, easy exfoliation, and easy preparation of heterojunction, 2D-vdW materials possess great application value. Recent studies show that topological magnetic configurations including magnetic skyrmion and chiral magnetic soliton can be induced in 2D-vdW materials such as Fe3GeTe2 and YbNi3Al9 systems. Due to characteristics of topological protection, nano-metric size and low-driven current, spintronic devices based on the topological magnetic configuration exhibit excellent characteristics of high stability, high storage intensity, and low power consumption. Therefore, combing the advantages of both 2D-vdW material and topological magnetic configuration, 2D-vdW topological magnetic materials open up a door to the application of the topological spintronics. In this research program, we focus on the study of the topological spin-textures in the 2D-vdW materials, including the topological configuration, topological Hall effect, magnetoresistance effect, and so on. These studies will uncover the dynamics of the motion and transmission, clarify the mechanism of the formation and interaction, explore the interplays between the multiple degrees of freedom and different energy fluctuations. This study will shed light not only on the low-dimensional magnetism in 2D-vdW materials, but also on the application in the topological spintronics.