空间极端温度环境下SiGe HBT总剂量效应机理与关键影响因素研究

锗硅异质结双极晶体管（SiGe HBT）具有低温特性优异、工作温度范围宽等特点。基于SiGe HBT的航天电子系统具有摆脱温控装置应用于壳体外部的潜力，从而降低发射成本并扩展远程功能。但空间中极端温度和电离辐射的综合作用对SiGe HBT的可靠性构成了新的挑战。本项目针对极端温度环境下SiGe HBT的总剂量效应机理及关键影响因素问题，开展高、低温稳态以及循环变温辐照实验，结合理论模拟方法，探索极端温度下SiGe HBT的总剂量效应规律；分析极端温度下辐射缺陷的产生、演化过程及其与电参数退化间的物理关联；揭示典型温度下器件性能退化的主导因素；建立极端温度环境总剂量损伤模型；明晰特征尺寸、偏置条件的影响规律与作用机制。研究结果对阐明极端温度环境与电离辐射的综合作用机制具有重要意义，从而为SiGe HBT的抗辐射加固设计和基于SiGe工艺的抗辐射集成电路研发提供支撑。

The silicon-germanium heterojunction bipolar transistor (SiGe HBT) has excellent low-temperature performance and wide operating temperature range. Spaceborne electronic systems based on SiGe HBTs has the potential to get rid of the “warm box” and work outside the spacecraft, thereby reducing launch costs and extending remote capabilities. However, the synergistic effects of extreme ambient temperatures and ionizing radiation in space pose new challenges to the reliability of SiGe HBTs. This project intends to investigate the basic mechanisms and key influencial factors of the total ionizing dose (TID) effect in SiGe HBTs at extreme temperatures. The irradiation experiment at extremely high and low temperatures as well as circulating temperatures will be performed, combined with theorical simulation methods, to explore the TID response of SiGe HBTs at extreme temperatures. The generation and evolution of radiation defects and their physical relationship with degradation of device performance will be analyzed, and the dominating degradation mechanisms at typical temperatures will be revealed. Moreover, the TID simulation model of SiGe HBTs in extreme temperature environment will be developed, and the impact of feature size and bias condition will be explained. The research results have important significance to the comprehensive understanding of the synergistic effects of extreme temperatures and ionizing radiation, which can support the hardening design of SiGe HBTs and the development of radiation hardened integrated circuits based on SiGe process.