终纹床核-中央杏仁核CRH信号对七氟烷诱导的幼年小鼠记忆损伤的调控作用及机制研究
批准号:
82101258
项目类别:
青年科学基金项目(C类)
资助金额:
30.0 万元
负责人:
钟锋
依托单位:
学科分类:
意识障碍与认知功能障碍
结题年份:
2024
批准年份:
2021
项目状态:
已结题
项目参与者:
钟锋
中文摘要
全身麻醉药对未成熟大脑智力发育的影响一直是社会关注的重要问题,而目前关于幼年麻醉经历对后续学习记忆的影响及机制尚不清楚。我们发现幼年小鼠多次七氟烷暴露会引起长时记忆损伤,多次七氟烷暴露减轻终纹床核CRH-ERK信号的激活,而阻断该信号可缓解记忆损伤。故假设:多次七氟烷暴露通过抑制幼年小鼠终纹床核-中央杏仁核环路CRH神经元CRH-ERK信号,减弱GABA能突触传递损伤长时记忆。我们通过建立幼年小鼠多次麻醉暴露模型,联合巴甫洛夫恐惧条件化行为范式,明确多次七氟烷暴露损伤长时记忆。使用行为学、药理学、化学遗传学、环路示踪和离体脑片电生理等技术,探讨终纹床核-中央杏仁核环路CRH神经元CRH-ERK信号在多次七氟烷暴露引起幼年小鼠长时记忆损伤中的作用。本研究将拓展公众对麻醉药物影响幼年神经发育的认识,为改善临床麻醉预后及围术期临床决策提供新的理论依据。
英文摘要
The impact of general anesthetics on immature brain has always been an important issue of social concern. However, the effect of the anesthesia experience in childhood on subsequent learning and memory and its mechanism are still unclear. We found that multiple exposure of sevoflurane in juvenile mice can cause long-term memory impairment. Multiple sevoflurane exposures reduce the activation of CRH-ERK signal in the nucleus of the stria terminalis, and blocking this signal can alleviate memory impairment. Therefore, we hypothesized that multiple exposures of sevoflurane may impair long-term memory by attenuating GABAgeric transmission through inhibiting the CRH-ERK signal of the CRH neuron in the BNST-CeA pathway in juvenile mice. We established multiple anesthesia exposures model in juvenile mice, combined with Palov’s Fear-Conditioning paradigm, to clarify that multiple sevoflurane exposures impairs long term memory. we use behavior test, pharmacological methods, chemogenetics, neural tracing, in vitro brain slice electrophysiology and other techniques to explore the role of the CRH-ERK signal of CRH neuron in the BNST-CeA pathway in the development of memory impairment induced by multiple sevoflurane exposures in juvenile mice. This study will expand the public's understanding of the effect of anesthetics on the neurodevelopment of young children, and provide new theoretical basis for improving the prognosis of clinical anesthesia and better perioperative clinical decision-making.
手术麻醉引起的神经功能变化一直是社会关注的热点问题,而学习记忆损伤和认知功能障碍是其常见的表现形式。我们的前期研究表明,幼年小鼠在反复暴露于七氟烷后会出现延迟性的记忆损伤,这一现象与BNST区的ERK信号激活密切相关。进一步的电生理实验结果显示,七氟烷暴露通过突触后机制减少BNST神经元抑制性突触传递,出现兴奋-抑制失衡。基于此,我们探讨可能BNST调控七氟烷引起记忆损伤的下游机制。通过神经示踪技术,我们发现中央杏仁核(CeA)接受来自BNST神经元的投射,化学遗传学激活该通路可有效缓解七氟烷引起的记忆损伤。进一步研究发现,丰富环境也能缓解七氟烷引起的恐惧记忆损伤。此外,我们发现另一个脑区——屏状核(CLA),也参与了七氟烷引起的记忆损伤,并通过ERK信号通路发挥作用。使用药理学激活CLA神经元能有效缓解七氟烷引起的记忆损伤。神经示踪结果显示,基底杏仁核(BLA)是屏状核的下游结构,使用化学遗传学激活CLA-BLA通路能够减轻七氟烷引起的记忆损伤。此外,我们在心衰小鼠模型中也发现存在记忆延迟损伤的现象,伴随着心衰引发的认知功能障碍,海马区胶质细胞出现广泛激活及线粒体损伤,可能与AKT-mTOR信号通路的上调相关。这些发现为围术期记忆损伤和认知功能障碍的防治提供了新的机制和治疗策略。
国内基金
海外基金