基于FeGa/PZT薄膜忆耦器的新型信息功能材料与原型器件的研究

随着信息技术的进步，人们对计算机的信息存储和处理能力有了更高的要求，研究具有高存储密度和低能耗的新型存储器件和具有高运算效率的非冯·诺依曼架构计算机是关系人类发展和社会进步的重大课题。具有磁电耦合效应的多铁性材料被认为是发展新型信息功能器件的重要候选材料。申请人在复合多铁性材料中实现了具有非易失性存储、布尔逻辑运算、类神经突触等功能的原型器件——忆耦器，但上述忆耦器仅在块体材料中得到了验证，针对薄膜忆耦器的研究目前还未开展。复合多铁性薄膜材料具有高密度、低能耗、低操作电压、高写入速度等优点，对于面向实际应用的功能器件，研究基于薄膜材料的忆耦器显得十分重要。本项目计划制备FeGa/PZT复合多铁性薄膜材料，研究基于该薄膜材料的忆耦器的信息快速写入功能，并在其中实现具有非易失性存储、布尔逻辑运算、类神经突触、加法器、计数器等功能的原型器件，为忆耦器走向实际应用奠定基础。

With the development of information technology, the improvement of information storage and processing capabilities of the computer has been sought for many years. It is important to study novel memory devices with high density and low energy consumption and non-von Neumann architecture computers with high computing efficiency. Multiferroics with magnetoelectric coupling effects are important candidates for the development of new information functional devices. In our previous study, memtranstor is prepared as prototype devices with functions such as non-volatile memory, Boolean logic operation, and synaptic function in the composite multiferroic materials. But the memtranstor has only been verified in bulk materials. The composite multiferroic film materials have the advantages of high density, low energy consumption, low operating voltage, and high write speed. This project plans to prepare a FeGa/PZT thin film with magnetoelectric coupling effect, to study the high write speed of information, and to develop a prototype for non-volatile memory, Boolean logic operation, and synaptic device. This research lays the foundation for the practical application of memtranstor.