通过磁性过渡金属元素掺杂获得高磁、室温铁磁性二维WS2的研究
批准号:
12104200
项目类别:
青年科学基金项目(C类)
资助金额:
30.0 万元
负责人:
孙媛媛
依托单位:
学科分类:
磁学及自旋电子学
结题年份:
2024
批准年份:
2021
项目状态:
已结题
项目参与者:
孙媛媛
中文摘要
本征抗磁性的二维WS2具有长的自旋扩散长度,在其中诱导出高磁化强度的室温铁磁性(高磁、室温铁磁性),可在自旋电子学器件上具有巨大的应用前景。本项目基于前期对二维WS2的制备及磁性研究,拟借助缺陷辅助磁性过渡金属元素(Mn、Fe、Co、Ni)的掺杂,实现对掺杂因素(元素、浓度及构型)的有效调控,探讨各掺杂因素对自旋浓度及磁耦合作用的调控机制,进而基于掺杂引入高浓度铁磁耦合的自旋,制备获得高磁、室温铁磁性二维WS2;同时采用第一性原理计算电子结构,揭示通过磁性过渡金属元素掺杂引入高浓度自旋、促进铁磁耦合的微观机理。通过实验与理论研究相结合,得到通过磁性过渡金属元素的可控掺杂获得高磁、室温铁磁性二维WS2的实验途径,并揭示各元素掺杂的差异及其诱导铁磁性机制,为二维WS2的诱导磁有序研究提供实验参考和理论依据。
英文摘要
Despite the two-dimensional WS2 (2D-WS2) is nonmagnetic, which has high spin diffusion length. Obtaining room-temperature ferromagnetism with high magnetization, the 2D-WS2 would has wide application prospects in spintronic devices. Based on our research of the synthesis and magnetism of the 2D-WS2, this present project propose to doping magnetic transition elements (Mn, Fe, Co and Ni) in 2D-WS2 with the assistance of defects, the doping factors (element, concentration and configuration) would be effectively controlled, the mechanism of the doping factors on spin density and magnetic coupling will be discussed, high density spin with ferromagnetic coupling will be introduced, and then the room-temperature ferromagnetism with high magnetization will be obtained. Meanwhile, the electronic structures will be calculated to reveal the microscopic mechanism of the magnetic transition elements doping on the increasing of spin density and magnetic coupling. According to the experimental and theoretical research, the experimental approach of achieving room-temperature ferromagnetism in 2D-WS2 with high magnetization through doping of magnetic transition elements will be obtained, and then the different contribution of the elements to the magnetization and their mechanism of inducing ferromagnetism will be revealed. This proposed research would be instructive to the theoretical and experimental research of obtaining magnetic order in 2D-WS2.
本征抗磁性的二维WS2具有长的自旋扩散长度,在其中诱导出高磁化强度的室温铁磁性(高磁、室温铁磁性),可在自旋电子学器件上具有巨大的应用前景。本项目分别制备获得了Ni、O、P元素掺杂二维WS2,对其掺杂诱导磁性进行了研究。首先制备获得Ni元素掺杂二维WS2,其磁性研究表明Ni掺杂能够在二维WS2中可引入具有铁磁或反铁磁耦合作用的自旋,在低浓度下随着掺杂浓度的提高二维WS2的掺杂诱导磁性得到大幅度增强,然而随着掺杂浓度的进一步提高Ni元素产生团聚现象,不利于其掺杂调控与磁性应用。轻质元素掺杂可在二维WS2中引入自旋,且不易发生掺杂元素的团簇。因此,本项目进一步分别对O、P元素掺杂二维WS2进行了制备与掺杂诱导磁性研究。研究表明:O元素掺杂二维WS2表现为顺磁性,O元素键合在基板面和边界处均不能引入自旋,键合在锯齿形边界处的氧会抑制二维WS2的边界态磁,因此O元素掺杂二维WS2不能应用于自旋电子学器件;P元素掺杂易于占据S空位形成替位型掺杂,能够在二维WS2中引入自旋,掺杂在同一S原子层的P原子之间发生铁磁耦合,掺杂在上下两个S原子层的P原子之间发生反铁磁耦合,随着P掺杂浓度的提高其室温铁磁性得到有效增强。本项目的实验与理论研究相结合,分别研究了Ni、O、P元素掺杂在二维WS2中的掺杂诱导磁性,为二维WS2的诱导磁有序研究提供实验参考和理论依据。
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海外基金