符合正电子湮没技术研究ZnO压敏电阻中缺陷和3d电子

采用符合正电子湮没辐射Doppler展宽谱、寿命谱和霍耳效应等方法研究掺TiO2的ZnO半导体和掺CuO的Bi2O3半导体中的霍耳系数、载流子浓度、电导率、缺陷和3d电子。测量不同配方经不同烧结温度制备的ZnO-Bi2O3-TiO2-CuO和ZnO-Bi2O3-TiO2-MnO2-CuO-Co2O3等系列压敏电阻的阈值电压、漏电流和非线性系数及其正电子湮没辐射Doppler展宽谱、寿命谱；探索过渡金属原子的3d电子、电子密度、缺陷、氧-缺陷复合体和晶界对氧化锌压敏电阻电性能的影响，进而寻找低阈值电压、低漏电流和高非线性系数的氧化锌压敏电阻器的制备方法。

The Hall coefficients, conductivities, concentrations of carriers, defects and 3d electrons of TiO2-doped ZnO and CuO-doped Bi2O3 semiconductors will be studied by means of the measurements of positron lifetime spectra, coincidence Doppler broadening spectra of positron annihilation radiation and Hall effect of these samples. The measurements of threshold voltage, leakage current, nonlinear coefficient, positron lifetime and coincidence Doppler broadening spectra will be performed on the ZnO-Bi2O3-TiO2-CuO and ZnO-Bi2O3-TiO2-MnO2-CuO-Co2O3 varistors with different compositions prepared by sintering at different temperatures. The influence of the 3d electrons of transition metal atoms, electron densities, defects, oxygen-defect complex and grain boundaries on the electrical properties of the ZnO-based varistors will be investigated so as to find a way to made the ZnO-based varistors with low threshold voltage and leakage current, high nonlinear coefficient.