基于WS2/Ta2Pd3Se8混合维度异质结能带工程的电荷转移机制与调控
批准号:
12104006
项目类别:
青年科学基金项目(C类)
资助金额:
30.0 万元
负责人:
刘学
依托单位:
学科分类:
表面界面与低维物理
结题年份:
2024
批准年份:
2021
项目状态:
已结题
项目参与者:
刘学
中文摘要
低维半导体材料体系界面间存在高效电荷转移过程,是其作为新一代高性能电子和光电器件的理论前提。本项目在前期基于二维异质结电荷转移能带工程调控的基础上进一步拓展研究,旨在完善低维界面间电荷转移理论体系和相关器件性能优化与功能拓展,解决在低维异质结界面研究与器件应用中面临的科学问题。为此,首先构筑基于可剥离的新型一维半导体材料Ta2Pd3Se8及二维层状半导体材料WS2的混合维度异质结,研究其高效可控制备方法。通过电子输运、稳态荧光和拉曼光谱、光电响应等测量手段,研究基于能带工程的混合维度界面间电荷转移规律和调控机制,并结合二维和一维体系各自优势,完善低维界面间高效电荷转移的清晰物理图像。在此基础上,进行混合维度异质结光电器件设计与开发,从接触模式、晶格取向、界面处理等角度开展器件性能优化和功能拓展,促进混合维度异质结界面基础研究与新型光电器件开发。
英文摘要
Efficient charge transfer process is generally existed between interfaces built by low dimensional semiconducting materials, which is the fundamental basis for next generation of high performance electric and optoelectronic devices. Based on our earlier research background on the study of charge transfer manipulation through two dimensional heterostructure band engineering, this project aims to unravel the remaining puzzles for low dimensional charge transfer mechanisms and its manipulations, so as to broaden the functionality and improve the performance of related devices based on low dimensional heterostructures, and finally promote their practical applications. For this purpose, our project will build mixed-dimensional heterostructures based on exfoliated one-dimensional (1D) semiconducting Ta2Pd3Se8 and two-dimensional (2D) semiconducting WS2 with high efficiency and controllability, which will serve as a unique platform for studying high efficiency charge transfer processes between low dimensional interfaces through electronic transport, steady state spectroscopy, photoresponse studies, etc. Based on band engineering by controlling the thickness and alignment of these two materials, we will be able to uncover the underlying manipulation mechanisms as interplayed with the peculiarities from both 1D and 2D systems. Besides, we will design and develop the optoelectronic devices based on this mixed-dimensional heterostructure. By studying the contacting mode, crystal orientation dependence, and interface treatments, this project will promote the fundamental studies of mixed-dimensional interfaces and their practical applications.
低维范德华半导体材料具备超微尺寸、超高机械柔性、高比表面积和光学透明度等显著优势,在新一代电子和光电器件应用领域具有巨大潜力,基于不同类型的范德华材料,构筑人工异质结,是进一步拓展器件功能性的重要手段。本项目围绕低维范德华混合维度异质结的界面电荷转移特性及光电器件研究展开,旨在通过实验与理论结合揭示混合维度界面电荷行为规律,推动高性能信息器件发展。研究团队通过机械剥离与定点转移技术,成功构筑了WS2/Ta2Pd3Se8、MoS2/Ta2Pd3Se8、WSe2/Ta2Pd3Se8等二维/一维混合维度异质结,结合低温退火工艺优化界面质量。理论计算与实验表征(拉曼光谱、开尔文探针力显微镜、电学输运测试等)表明,Type-I型能带匹配模式促进了界面电荷高效分离,形成单边耗尽层,显著提升光电转换效率。基于此开发的光电探测器在可见至近红外波段表现出优异性能:响应速率达亚微秒级,外部量子效率(EQE)高达970%,并具备偏振选择性探测能力。此外,通过栅极电压调控界面费米面相对位置,实现了光电响应极性反转和可重构逻辑器件功能,验证了电场调控界面电荷行为的有效性。研究还拓展至新型低维材料体系,如反铁磁半导体CrSBr,其面内各向异性被用于构筑偏振敏感器件,并通过自旋相关测量揭示了其本征磁电耦合特性。项目迄今共发表SCI论文8篇,包括ACS Nano、Advanced Functional Materials、Physical Review B、Applied Physics Letters等,相关成果计划申请发明专利2项,为低维界面物性研究及器件应用开发提供了重要支撑。综上所述,通过本项目的开展,混合维度异质结的构筑方法及其电荷转移机制的研究为后摩尔时代低维材料集成与器件开发奠定方法与理论基础;高性能光电探测器在灵敏度、响应速度、转换效率等方面的突破,有望推动新一代信息技术的发展,促进新型光电子器件、自旋电子器件的研发,为低维材料在芯片级集成和工业化生产提供技术储备。
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海外基金