典型VIA族窄禁带三元半导体薄膜的外延生长与物性调控

外延生长是尖端的材料制备技术，在科学研究和工业生产中扮演着极为重要的角色。在当今Si材料面临物理极限和技术瓶颈的背景下，选取更有潜力的新材料，实现其可控外延生长，是实现新概念式物理效应和器件的关键。复杂结构金属硫族化合物具有低带隙、高迁移率等优异的物质特性，极具科研价值和战略应用前景，但相关研究起步较晚，缺乏高质量单晶、薄膜样品，许多基础的材料问题和物理机制尚不清楚。本项目拟利用先进的外延生长技术，实现三类典型高对称结构复杂金属硫族化合物的外延单晶薄膜的制备；结合先进实验手段和理论方法，研究其本征物理和材料性能；通过改变薄膜晶格应力和晶体取向，进一步实现此类材料光电特性和场效应的人工调控和提升。本项目有助于拓宽外延生长技术的应用范围，探索制备复杂硫化物外延单晶层的普适性方法；是向硫化物微电子和光电子器件研发迈出的关键一步，在超越Si材料的“后摩尔时代”，具有重要的科学意义和应用前景。

Epitaxial growth is a state-of-art material fabrication technique that plays key role in scientific research and industrial applications. Considering Si-based materials are currently facing both physical limits and technological restrictions, it is critical to identify new potential material and its epitaxy for realization of conceptual physical phenomena and device applications. Due to excellent material properties, such as low intrinsic band gap and high carrier mobility etc., ternary metal sulfide compound semiconductors with complex structures show promise for basic scientific research and strategical applications. However, the research of these materials is still in its infancy stage. Due to lack of high quality single crystals and epitaxial films, some fundamental material properties and associated physical mechanism remain unclear. This project aims to achieve high quality film epitaxy for three representative types of high symmetry complex metal sulfides. Combined advanced experimental and theoretical techniques will be utilized to unveil the intrinsic physical and material properties. Epitaxial lattice strain and crystallography orientation will be controlled to engineer and enhance the optoelectronic and field effect performance. This project helps to expand the potential of current epitaxy technique to find general method for epitaxial growth of flexible high quality thin layers of complex metal sulfides. Our work will also provide an important step to go beyond silicon and Moore’s law towards sulfides based microelectronics and optoelectronics with significant science and technology promise.