基于氧化镓材料特性的高效大功率整流芯片的研究

微波无线能源传输技术在空间发电站、无线传感网络等方面具有很广泛的应用前景，其中微波整流是其技术的关键。目前，整流天线大多基于现有的硅、砷化镓、氮化镓等材料的整流芯片，存在高频时转化效率低的问题。本项目基于申请人在京都大学团队利用砷化镓材料实现2.45GHz世界最高效率的工作经验上，首次利用新型氧化镓材料，其有高于氮化镓的极宽带隙，并承载大功率输入；在高频特性方面，氧化镓具有与砷化镓相同的空穴迁移率，能够实现高效大功率的整流芯片。但氧化镓材料有着低于硅材料的热传导系数的问题，利用肖特基接触散热的双层散热方式，实现高效大功率的氧化镓整流芯片的研究。研究内容包含（1）基于氧化镓材料的肖特基接触双层散热二极管整流芯片的研究(2) 测量新型氧化镓肖特基整流芯片的模型（3）设计整流天线对其芯片性能进行验证。该项目的研究为无线能量传输提供新的理论指导和技术支撑，能够加速实现高效大功率应用。

Microwave wireless power transfer technology has a very wide application prospect in space solar power stations, wireless sensor networks, etc, and microwave rectifier is the key of the technology. At present, the rectennas are based on the existing silicon, GaAs and GaN materials rectifier chip, which has low conversion efficiency at high frequency. This project is based on the applicant's work experience to achieve the world's highest efficiency of 2.45GHz using GaAs rectifier chip in Kyoto University team, and adopt a new semiconductor material Ga2O3 initially, it possesses an extreme wideband gap higher than GaN and can rectify high power; In high frequency characteristics, Ga2O3 has the same hole mobility as GaAs, which can realize high efficiency and high power rectifier chips. .However, Ga2O3 material possesses a lower thermal conductivity than silicon, we adopt Schottky contact double-layer heat dissipation construction and achieve high efficiency and high power Ga2O3 rectifier chip research. The research contents include: .(1) Research on Schottky contact double-layer heat dissipation diode rectifier chip based on β- Ga2O3; .(2) We measure the new β-Ga2O3 Schottky rectifier chip SPICE model, based on the model to design the rectenna..(3) Used the rectifier circuit, verify the performance of the chip..The research of this project will provide new theoretical guidance and technical support for the wide application of wireless power transfer technolgy, and accelerate the realization in the integration, high efficiency, high power of the practical application.