基于表面态原位钝化的多孔铋酸铜高效光电催化制氢研究

CuBi2O4是一种p型半导体，其理论光电流密度大，并且其开启电势高于大多数p型半导体。因此，CuBi2O4作为光阴极在p-n双光子太阳能分解水器件领域具有良好的应用前景。利用CuBi2O4光阴极构建高效的p−n双光子太阳能分解水制氢器件，需要对CuBi2O4光阴极进行调控和修饰，以提升其开启电势和饱和光电流。本项目拟通过构筑多孔结构增加CuBi2O4与电解液的接触面积，促进电荷从体相传输至表面；在此基础上原位生长MgO等材料钝化CuBi2O4的表面态，抑制半导体的费米能级钉扎效应，增大半导体的能带弯曲和空间电荷层的厚度；然后，深入研究MgO等材料在CuBi2O4能带弯曲和表面复合等方面的原位钝化作用机制。

CuBi2O4 is a p-type semiconductor with high theoretical photocurrent density and higher onset potential than most other p-type semiconductors. Therefore, as a photocathode, CuBi2O4 has a good application prospect in the field of p-n two-photon solar water splitting devices. Using CuBi2O4 photocathodes to construct efficient p-n two-photon devices for hydrogen production from solar water splitting, it is necessary to adjust and modify CuBi2O4 photocathodes to enhance their onset potential and saturation photocurrent. This project aims to increase the contact area between CuBi2O4 and electrolyte by constructing porous structure, so as to improve the efficiency of charge transfer from bulk to surface. Then, MgO and other materials are grown in-situ to passivate the surface states of CuBi2O4. These materials can suppress the Fermi level pinning effect and increase the band bending and the thickness of space charge layer. Then, the mechanism of surface states of MgO in-situ passivated CuBi2O4 in band bending and surface recombination was studied.