二维铁磁Fe3GeTe2/铁电PMN-PT异质结的电、磁性能调控及机理研究

基于二维铁磁材料的磁电耦合异质结可同时利用电子的电荷和自旋属性，在下一代磁传感器、磁存储器、自旋电子学器件等领域具有广阔的应用前景。目前，此类磁电耦合异质结仍有不少关键科学问题尚未解决，例如二维铁磁材料的载流子浓度、能带结构与电、磁性能之间的耦合机制尚不明确，载流子浓度变化如何调控磁畴，常用的栅极材料对二维铁磁材料物性的调控幅度有限且具有易失性等。针对上述问题，本项目将结合二维铁磁材料Fe3GeTe2（原子级厚度、居里温度高）和铁电单晶PMN-PT（室温非易失、强调控）的优势，构建二维铁磁Fe3GeTe2 (FGT)/铁电PMN-PT异质结，并研究电场诱导的PMN-PT铁电畴翻转和铁电极化电荷对FGT载流子浓度、磁畴结构、电输运和磁性能的调控规律，阐明磁电耦合效应和二维铁磁的内在物理机制，实现电场对FGT电、磁性能的非易失调控，为构建基于二维磁性材料的非易失电子器件提供物理基础。

Magnetoelectric coupling heterostructures based on two-dimensional ferromagnetic materials can utilize the charge and spin properties of electrons at the same time, and have broad application prospects in the next generation of magnetic sensors, magnetic memories, spin electronic devices and so on. At present, there are still many critical problems for this kind of magnetoelectric coupling heterostructure, such as the ambiguous coupling mechanism between the carrier concentration, band structure and the electronic and magnetic properties of two-dimensional ferromagnets, the regulation effect of the carrier concentration on magnetic domains, the limited and volatile control of common gate materials on the physical properties of two-dimensional ferromagnetic materials. In view of the above problems, this project proposes to combine the advantages of two-dimensional ferromagnet Fe3GeTe2 (atomic thickness, high Curie temperature) and ferroelectric single crystal PMN-PT (non-volatility, strong regulation), to construct the two-dimensional ferromagnetic Fe3GeTe2 (FGT)/ ferroelectric PMN-PT heterostructure. Based on this, the project plans to study the regulation mechanism of electric-field-induced ferroelectric domain inversion and ferroelectric polarization charges of the PMN-PT on the carrier concentration, magnetic domain structure, electric transport and magnetic properties of the Fe3GeTe2 (FGT), and summarizes the internal physical mechanism of the magnetoelectric coupling effect and two-dimensional ferromagnetism. The project is also supposed to realize the non-volatile control of electric and magnetic properties of FGT by electric field, and thus provides physical foundation for the construction of non-volatile electronic devices based on two-dimensional ferromagnetic materials.