Influence of ferromagnetic current screen layer on current perpendicular to the plane-giant magnetoresistance
Influence of ferromagnetic current screen layer on current perpendicular to the plane-giant magnetoresistance
复制标题
铁磁电流屏蔽层对垂直于平面巨磁阻电流的影响
DOI：
10.1063/1.2172568
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
H. Hoshiya
中科院分区：
文献类型：
--
作者：
K. Hoshino;H. Hoshiya
我们研究了铁磁电流屏蔽层对垂直于平面的电流的影响-巨磁电阻效应。我们制备了一种底部型合成钉扎自旋阀薄膜，其铁磁电流屏蔽层为自然氧化的CoFe，该铁磁电流屏蔽层与自由层和钉扎层磁性分离。当氧化前CoFe层厚度增加到1.0nm以上时，我们观察到对应于未氧化CoFe的磁矩。随着CoFe层厚度从1.0nm增加到3.7nm，磁电阻率从1.6%突然增加到7.2%，这与磁矩的变化趋势相同。MR比似乎强烈依赖于电流屏蔽层的磁矩。高MR比的MR曲线在零磁场附近有两个峰值。通过对自由层、钉扎层和电流屏蔽层的磁化结构的分析，发现自由层和钉扎层的铁磁性质与电流屏蔽层的铁磁性质有关。
We investigated the influence of the ferromagnetic current screen layer on a current perpendicular to the plane-giant magnetoresistance (CPP-GMR). We prepared a bottom-type synthetic-pinned spin-valve film with a ferromagnetic current screen layer of naturally oxidized CoFe, which was separated magnetically from the free and pinned layers. When the CoFe layer thickness increased to above 1.0nm before oxidation, we observed a magnetic moment corresponding to the unoxidized CoFe. We also found that the MR ratio abruptly increased from 1.6% to 7.2% with the increase in the CoFe layer thickness from 1.0to3.7nm before oxidation, which was the same tendency observed in the magnetic moment. The MR ratio seemed to be strongly dependent on the magnetic moment of the current screen layer. The MR curve with the high MR ratio had two peaks near the zero magnetic fields. Based on the analysis of the magnetization configuration of the free, pinned, and current screen layers, we found that the ferromagnetic properties o...