Electroluminescence from silicon-rich nitride/silicon superlattice structures
Electroluminescence from silicon-rich nitride/silicon superlattice structures
复制标题
DOI：
10.1063/1.3003867
复制
发表时间：
2008-10
影响因子：
4
通讯作者：
J. Warga;Rui Li;S. Basu;L. D. Negro
中科院分区：
文献类型：
--
作者：
J. Warga;Rui Li;S. Basu;L. D. Negro
采用磁控共溅射法制备了不同硅浓度的富硅氮化物/硅超晶格发光结构（SRN/Si-SL）。在700 °C下的快速热退火导致在光和电激发下发射800 nm的小的非晶Si团簇的成核。研究了SRN/Si-SL的电输运机制和电致发光特性。已经证明了具有低开启电压（6 V）的器件，并且EL机制归因于Si纳米团簇处的电子-空穴对的双极复合。我们的研究结果表明，在SRN/Si-SL中的非晶硅团簇为硅兼容光学器件的制造提供了一个有前途的路线。
Luminescent silicon-rich nitride/silicon superlattice structures (SRN/Si-SLs) with different silicon concentrations were fabricated by direct magnetron cosputtering deposition. Rapid thermal annealing at 700 °C resulted in the nucleation of small amorphous Si clusters that emit at 800 nm under both optical and electrical excitations. The electrical transport mechanism and the electroluminescence (EL) of SRN/Si-SLs have been investigated. Devices with low turn-on voltage (6 V) have been demonstrated and the EL mechanism has been attributed to bipolar recombination of electron-hole pairs at Si nanoclusters. Our results demonstrate that amorphous Si clusters in SRN/Si-SLs provide a promising route for the fabrication of Si-compatible optical devices.