Infrared Cyclotron Resonance in Semiconducting Surface Inversion Layers
Infrared Cyclotron Resonance in Semiconducting Surface Inversion Layers
复制标题
半导体表面反型层中的红外回旋共振
DOI:
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发表时间:
1976
期刊:
影响因子:
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通讯作者:
J. Quinn
中科院分区:
文献类型:
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作者:
C. Ting;S. Ying;J. Quinn
The frequency-dependent conductivity $ensuremath{sigma}(ensuremath{omega})$ of a two-dimensional interacting electron gas in the presence of a random array of scattering centers and a dc magnetic field is studied. Electron-electron interaction effects enter $ensuremath{sigma}(ensuremath{omega})$ through the holomorphic memory function $M(ensuremath{omega})$ whose imaginary part is the inverse of the frequency-dependent relaxation time $ensuremath{ au}(ensuremath{omega})$. A qualitative explanation of some of the perplexing results observed in infrared cyclotron resonance, including how electron-electron interactions affect both the fundamental and harmonics, is given.