InGaAsP/InP (1.3 μm) buried-crescent lasers with separate optical confinement
InGaAsP/InP (1.3 μm) buried-crescent lasers with separate optical confinement
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具有独立光学限制的 InGaAsP/InP (1.3 μm) 埋入新月形激光器
DOI：
10.1049/el:19820606
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
C. Henry
中科院分区：
文献类型：
--
作者：
R. Logan;J. P. Ziel;H. Temkin;C. Henry
在InGaAsP（-= 1.1 μm）激光器的有源层两侧引入InGaAsP（-= 1.3 μm）包层，使激光器的性能得到显著改善。这种激光器具有良好的再现性和高产量，具有20-35 mA的阈值电流，高达50 mW的脉冲功率输出，具有优异的输出线性度，以及50- 60%的外量子效率。已观察到高达90°C的工作温度和4 mW的输出功率。短电流脉冲激励表明，这些激光器是适合千兆位/秒的操作。
We report that a significant improvement in the performance of InGaAsP (-=1.3 μm) crescent lasers is obtained by introducing InGaAsP (-=1.1 μm) cladding layers on both sides of the active layer. Such lasers grown with good reproducibility and high yield have 20-35 mA threshold currents, pulsed power outputs of up to 50 mW, with excellent output linearity, and external quantum efficiencies of 50-60%. Operation up to 90°C with 4 mW output power has been observed. Short current pulse excitation shows that these lasers are suitable for gigabit/s operation.