Structure and energy storage properties of Ti vacancies charge compensated Re2O3-doped SrTiO3 (Re = Pr, Nd, Gd) ceramics
Structure and energy storage properties of Ti vacancies charge compensated Re2O3-doped SrTiO3 (Re = Pr, Nd, Gd) ceramics
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DOI：
10.1007/s10854-013-1215-1
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发表时间：
2013-04
期刊：
影响因子：
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通讯作者：
Z. Shen;Qiujun Hu;Yueming Li;Zhumei Wang;W. Luo;Yan Hong;Z. Xie;R. Liao
中科院分区：
文献类型：
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作者：
Z. Shen;Qiujun Hu;Yueming Li;Zhumei Wang;W. Luo;Yan Hong;Z. Xie;R. Liao
By introducing Ti vacancies in advance for charge compensation, single cubic perveskite rare-earth doped strontium titanate ceramics with the formulaRe0.02Sr0.98Ti0.995O3(Re–STO,Re= Pr, Nd, Gd) were prepared via solid-state reaction method. AllRe–STO ceramics sintered at 1,410 °C in air for 3 h showed a similar dense microstructure with the grain size lower than 10 μm. The room temperature dielectric constantεrofRe–STO ceramics was higher than 3,000 (@ 1 kHz) and changed <8 % within the applied bias electric field. Especially, the room temperature dielectric loss tanδofRe–STO ceramics was lower than 0.02 (@ 1 kHz), and the average breakdown strengthEbsurpassed 14 kV/mm, demonstrating thatRe–STO ceramics could be very promising for high-voltage capacitor applications. The temperature stability of theεrofRe–STO ceramics was evaluated in a temperature range of −50 to 200 °C. Meanwhile, the energy storage density ofRe–STO ceramics was investigated as a function of the applied bias electric field.
