Fillingness dependence of electronic structures in strongly correlated electron systems: Titanates and vanadates
Fillingness dependence of electronic structures in strongly correlated electron systems: Titanates and vanadates
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DOI：
10.1016/0022-3697(92)90152-4
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发表时间：
1992-12
影响因子：
4
通讯作者：
Y. Tokura
中科院分区：
文献类型：
--
作者：
Y. Tokura
根据我们最近的光谱研究并与铜酸盐超导体的情况进行比较，概述了类钙钛矿钛酸盐和钒酸盐中电子结构的填充度（或3d电子数）依赖性。与铜酸盐一样，虽然数量不同，但在 Ti3+- 和 V3+ 基莫特绝缘体中空穴掺杂时观察到载流子质量和散射率的变化以及间隙态的形成。
Fillingness (or 3d electron number) dependence of electronic structures in perovskite-like titanates and vanadates is overviewed based on our recent spectroscopic studies in comparison with the case of cuprate superconductors. In common with the cuprates, though different quantitatively, changes of carrier mass and scattering rate as well as formation of the ingap states are observed with hole-doping in the Ti3+- and V3+-based Mott insulators.