OH Radical Activation of ZnO Growth in Remote Plasma Metalorganic Chemical Vapor Deposition
OH Radical Activation of ZnO Growth in Remote Plasma Metalorganic Chemical Vapor Deposition
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远程等离子体金属有机化学气相沉积中 ZnO 生长的 OH 自由基激活
DOI：
10.1143/jjap.42.l775
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发表时间：
2003
影响因子：
1.5
通讯作者：
J. Temmyo
中科院分区：
文献类型：
--
作者：
A. Nakamura;S. Shigemori;Y. Shimizu;T. Aoki;A. Tanaka;J. Temmyo
研究了羟基自由基在远程等离子体增强金属有机化学气相沉积（RPE-MOCVD）法制备ZnO薄膜过程中的可能作用。等离子体是由氧气中的射频放电产生的。载气由H2变为N2导致沉积速率显著降低。此外，生长速率也随反应器中氧-氢混合气中H2含量的变化而变化。对反应器气体在衬底附近发出的光的光谱学研究表明，载气对沉积速率的影响与OH自由基的发生有关。
A possible role of OH radicals in the formation mechanism of ZnO thin films by remote plasmaenhanced metalorganic chemical vapor deposition (RPE-MOCVD) was investigated. The plasma was generated by a radio frequency discharge in O2. The change of the carrier gas from H2 to N2 resulted in a significant decrease in deposition rate. Moreover, growth rate changed also with the content of H2 of an oxygen-hydrogen mixture gas in a reactor. Optical spectroscopic investigation of the light emitted by the reactor gas in the vicinity of a substrate showed that the effect of the carrier gas on deposition rate is related to the occurrence of OH radicals.