Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films
Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films
复制标题
使用等离子体辅助化学气相沉积金刚石膜制造的肖特基二极管的电特性
DOI：
10.1063/1.99865
复制
发表时间：
1988
影响因子：
4
通讯作者：
R. Messier
中科院分区：
文献类型：
--
作者：
G. Gildenblat;S. Grot;C. Wronski;A. Badzian;T. Badzian;R. Messier
利用微波等离子体辅助化学气相沉积法制备了金刚石薄膜，利用金和铝的接触制备了肖特基二极管。这些器件的电流-电压特性和电容-电压-频率特性与传统的超高压工艺在金刚石基片上制备的器件相似。
Schottky diodes were fabricated using gold and aluminum contacts to thin diamond films obtained by a microwave plasma assisted chemical vapor deposition process. The current‐voltage and capacitance‐voltage‐frequency characteristics of these devices are similar to those fabricated on a crystalline diamond base formed by traditional ultrahigh pressure process.