Effect of the surface microstructure of SiC inner coating on the bonding strength and ablation resistance of ZrB2-SiC coating for C/C composites
Effect of the surface microstructure of SiC inner coating on the bonding strength and ablation resistance of ZrB2-SiC coating for C/C composites
复制标题
SiC内涂层表面微观结构对C/C复合材料ZrB2-SiC涂层结合强度和抗烧蚀性能的影响
DOI：
10.1016/j.ceramint.2016.09.003
复制
发表时间：
2016-12
影响因子：
5.2
通讯作者：
Chen Wang
中科院分区：
文献类型：
--
作者：
Jincui Ren;Tao Li;Tian Fei;Chen Wang
研究了碳化硅内涂层表面形貌对C/C复合材料喷涂层结合强度和抗烧蚀性能的影响。利用X射线衍射仪、扫描电子显微镜和三维共聚焦激光扫描显微镜对不同温度下化学气相沉积和填充渗层制备的碳化硅内涂层的微观结构进行了分析。用拉伸结合强度和氧乙炔烧蚀试验分别表征了涂层的结合强度和抗烧蚀性能。结果表明，采用化学气相沉积法制备的碳化硅内涂层表面光滑，不利于提高涂层的结合强度和抗烧蚀性能。以此为内层的涂层具有良好的结合强度和耐烧蚀性能，表面粗糙度为72.15µm。
The present study has been conducted in order to investigate the effect of the surface morphology of SiC inner coating on the bonding strength and ablation resistance of the sprayed ZrB2-SiC coating for C/C composites. The microstructure of SiC inner coatings prepared by chemical vapor deposition and pack cementation at different temperatures were analyzed by X-ray diffraction, scanning electron microscopy, and 3D Confocal Laser Scanning Microscope. Tensile bonding strength and oxyacetylene ablation testing were used to characterize the bonding strength and ablation resistance of the sprayed ZrB2-SiC coating, respectively. Results show that SiC inner coating prepared by chemical vapor deposition has a smooth surface, which is not beneficial to improve the bonding strength and ablation resistance of the sprayed ZrB2-SiC coating. SiC inner coating prepared by pack cementation at 2000 °C has a rugged surface with the roughness of 72.15 µm, and the sprayed ZrB2-SiC coating with it as inner layer exhibits good bonding strength and ablation resistance.
登录
查看更多内容
影响因子：
3.1
作者：
X. Yao;Hejun Li;Yulei Zhang;Kezhi Li;Q. Fu;Han Peng
通讯作者：
X. Yao;Hejun Li;Yulei Zhang;Kezhi Li;Q. Fu;Han Peng
影响因子：
4.6
作者：
S. Lee;W. Ho;F. Lai
通讯作者：
S. Lee;W. Ho;F. Lai
影响因子：
6.7
作者：
Yongjie Wang;Hejun Li;Q. Fu;Heng Wu;Dong-jia Yao;B. Wei
通讯作者：
Yongjie Wang;Hejun Li;Q. Fu;Heng Wu;Dong-jia Yao;B. Wei
影响因子：
10.9
作者：
P. Crocker;B. Mcenaney
通讯作者：
P. Crocker;B. Mcenaney
影响因子：
2.4
作者：
T. M. D. Silva;J. Moreira
通讯作者：
T. M. D. Silva;J. Moreira