Photoconductivity and Photoluminescence of Amorphous Carbon Nitride a-CN x Films Prepared by the Layer-by-Layer Method
Photoconductivity and Photoluminescence of Amorphous Carbon Nitride a-CN x Films Prepared by the Layer-by-Layer Method
复制标题
逐层法制备非晶氮化碳a-CN x 薄膜的光电导和光致发光
DOI：
10.1557/proc-593-499
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
S. Nonomura
中科院分区：
文献类型：
--
作者：
T. Katsuno;S. Nitta;Hitoe Habuchi;T. Iwasaki;T. Itoh;S. Nonomura
本实验室制备的非晶态氮化碳薄膜a- cn x具有较高的光敏性P s（光导率σ P与暗电导率σ d之比），最大P s约为5×10 6，是氢化非晶态硅a- si:H的50倍左右。我们成功地观察到光导光谱，其中光导开始于近2ev，并在3ev达到饱和。然后σ p在3.7 eV时再次增大到6.2 eV。观察到σ p与激发能和激发强度的关系。光致发光光谱范围从0.8 eV的红外光谱到3.5 eV的紫外光谱。利用这些数据和光热偏转光谱，我们提出了la - cn x的电子态密度的精细模型。
Amorphous carbon nitride films a-CN x , which made in our laboratory, show high photosensitivity P s that is a ratio of photoconductivity σ p and dark-electrical conductivity σ d Maximum P s of a-CN x is about 5×10 6 which is about 50 times larger than that of hydrogenated amorphous silicon a-Si:H. We have succeeded to observe photoconductivity spectra where photoconductivity starts nearly at 2 eV and saturates at 3 eV. Then σ p increase again at 3.7 eV up to 6.2 eV. The dependence of σ p on excitation energy and intensity is observed. Photoluminescence spectrum is also obtained which have a spectrum from infrared of 0.8 eV up to ultraviolet of 3.5 eV. Using these data together with photothermal deflection spectra, we have presented a refined model of the electronic density of states for LLa-CN x .