Fabrication of solution-processed ambipolar electrolyte-gated field effect transistors from a MoS2–polymer hybrid for multifunctional optoelectronics
Fabrication of solution-processed ambipolar electrolyte-gated field effect transistors from a MoS2–polymer hybrid for multifunctional optoelectronics
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DOI：
10.1039/d0tc05250g
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发表时间：
2021-02
影响因子：
6.4
通讯作者：
Jiaojiao Song;Yican Chu;Zhizhen Liu;Haihua Xu
中科院分区：
文献类型：
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作者：
Jiaojiao Song;Yican Chu;Zhizhen Liu;Haihua Xu
具有弱层间货车德瓦尔斯键和强层内共价键的少层二硫化钼（MoS 2）由于其可规模化生产、可调带隙和机械柔性而在光电应用中引起巨大兴趣。在这里，我们提出了高性能的双极电解质门控场效应晶体管（amEGFET）的基础上的解决方案处理的二硫化钼-聚合物混合。它们的空穴和电子迁移率分别为0.21 cm 2 V−1 s−1和0.04 cm 2 V−1 s−1，p型和n型操作的高电流开/关比均>106。显著的双极特性基本上由在半导体/电解质界面处形成的大的互穿网络决定。使用这样的设备，我们证明了第一次低功耗操作的互补金属氧化物半导体（CMOS）兼容和具有成本效益的电逆变器和光调制器。我们的结果拓宽了二维半导体的未来光电应用。
Few-layer molybdenum disulfide (MoS2), which has weak interlayer van der Waals bonds and strong intralayer covalent bonds, is of huge interest in optoelectronic applications due to its scalable production, tunable bandgap and mechanical flexibility. Here, we present high-performance ambipolar electrolyte-gated field effect transistors (amEGFETs) based on a solution-processed MoS2–polymer hybrid. They exhibit hole and electron mobilities of 0.21 cm2 V−1 s−1 and 0.04 cm2 V−1 s−1, respectively, together with a high current on/off ratio of >106 for both p-type and n-type operations. The pronounced ambipolar characteristics are essentially determined by the large interpenetrating network formed at the semiconductor/electrolyte interface. Using such a device, we demonstrate for the first time low-power operations of complementary metal-oxide semiconductor (CMOS)-compatible and cost-efficient electrical inverter and optical modulator. Our results broaden the future optoelectronic applications of two-dimensional semiconductors.