Fast-trap characterization in Ge CMOS using Sub-1 ns ultra-fast measurement system
Fast-trap characterization in Ge CMOS using Sub-1 ns ultra-fast measurement system
复制标题
DOI：
10.1109/iedm.2016.7838519
复制
发表时间：
2016-12
期刊：
影响因子：
--
通讯作者：
X. Yu;B. Chen;R. Cheng;Y. Qu;J. Han;R. Zhang;Y. Zhao
中科院分区：
文献类型：
--
作者：
X. Yu;B. Chen;R. Cheng;Y. Qu;J. Han;R. Zhang;Y. Zhao
采用新型亚1 ns超快测量系统制备并表征了具有Al 2 O3/GeOx/Ge栅叠层的Ge p-和n-MOSFET。器件工作条件下，应用Vg的超快上升沿下降到小于1 ns的确认。研究发现，由于快俘获效应，在前10 ns内的电流衰减比从100 ns到更长时间的电流衰减更显著。此外，还测量和计算了Ge MOSFET中Ec和Ev内的陷阱密度分布。
Ge p- and n-MOSFETs with Al2O3/GeOx/Ge gate stack were fabricated and characterized using a novel sub-1 ns ultra-fast measurement system. Devices operation under the conditions, that applying Vg with the ultra-fast rise edge down to less than 1 ns are confirmed. It is found that the current degradation within the first 10 ns is much more significant than that from 100 ns to longer time due to the fast trapping effect. In additions, the trap density distributions in Ge MOSFETs inside Ec and Ev are measured and calculated.