Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
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DOI：
10.1063/1.1368374
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发表时间：
2001-04-30
影响因子：
4
通讯作者：
Ho, JK
中科院分区：
文献类型：
--
作者：
Wang, T;Bai, J;Ho, JK
通过温度相关和激发功率相关的光致发光测量，研究了激子局域效应和量子限制斯塔克效应 (QCSE) 对 InGaN/GaN 基发光二极管 (LED) 性能的影响，涉及铟摩尔分数和阱厚度。激子局域化效应可以通过增加铟摩尔分数或增加阱厚度（最多2.5 nm）来增强。 QCSE 随着铟浓度或井厚度的增加而单调增强。通过增强激子局域化效应可以提高LED的输出功率；然而，QCSE对LED输出功率的影响比激子局域化效应强得多，为进一步提高InGaN/GaN基LED的性能应考虑到这一点。 (C) 2001 年美国物理研究所。
The exciton-localization effect and quantum-confine Stark effect (QCSE) on the performance of InGaN/GaN-based light-emitting diodes (LEDs) have been investigated with regard to indium mole fraction and well thickness by means of temperature-dependent and excitation-power-dependent photoluminescence measurements. The exciton-localization effect can be enhanced by increasing the indium mole fraction or increasing well thickness but up to 2.5 nm. The QCSE is monotonically enhanced with increasing indium concentration or well thickness. The output power of the LED can be increased by the enhanced exciton-localization effect; however, the QCSE has much stronger influence on the output power of LEDs than the exciton-localization effect, which should be taken into account for further improving the performance of InGaN/GaN-based LEDs. (C) 2001 American Institute of Physics.